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IEICE TRANSACTIONS on Electronics
Volume E86-C No.10  (Publication Date:2003/10/01)
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Special Issue on Heterostructure Microelectronics with TWHM2003

pp.1907-1907  FOREWORD
FOREWORD
Yasuo OHNO  
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pp.1908-1910  INVITED PAPER
HEMT: Looking Back at Its Successful Commercialization
Takashi MIMURA  
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pp.1911-1915  INVITED PAPER
Current Status and Future Prospects of Semiconductor Terahertz Electronics
Hans L. HARTNAGEL  Manuel RODRIGUEZ-GIRONES  
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pp.1916-1922  INVITED PAPER
Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems
Toshihide SUZUKI  Yasuhiro NAKASHA  Hideki KANO  Masaru SATO  Satoshi MASUDA  Ken SAWADA  Kozo MAKIYAMA  Tsuyoshi TAKAHASHI  Tatsuya HIROSE  Naoki HARA  Masahiko TAKIGAWA  
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pp.1923-1928  INVITED PAPER
Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density
Minoru IDA  Kenji KURISHIMA  Noriyuki WATANABE  
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pp.1929-1934  INVITED PAPER
Type-II Base-Collector Performance Advantages and Limitations in High-Speed NpN Double Heterojunction Bipolar Transistors (DHBTs)
C. R. BOLOGNESI  Martin W. DVORAK  Simon P. WATKINS  
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pp.1935-1942  INVITED PAPER
Novel High-Throughput Plasma Enhanced Growth of SiGe in a 200 mm/300 mm Single Wafer Cluster Tool
Juergen RAMM  Hans von KANEL  
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pp.1943-1948  INVITED PAPER
Hetero-Interface Properties of SiO2/4H-SiC on Various Crystal Orientations
Hiroyuki MATSUNAMI  Tsunenobu KIMOTO  Hiroshi YANO  
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pp.1949-1954  INVITED PAPER
RF Performance of Diamond Surface-Channel Field-Effect Transistors
Hitoshi UMEZAWA  Shingo MIYAMOTO  Hiroki MATSUDAIRA  Hiroaki ISHIZAKA  Kwang-Soup SONG  Minoru TACHIKI  Hiroshi KAWARADA  
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pp.1955-1959  INVITED PAPER
High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire
Ilesanmi ADESIDA  Vipan KUMAR  Jinwei YANG  Muhammed Asif KHAN  
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pp.1960-1967  INVITED PAPER
TCAD Challenges for Heterostructure Microelectronics
Eugeny LYUMKIS  Rimvydas MICKEVICIUS  Oleg PENZIN  Boris POLSKY  Karim El SAYED  Andreas WETTSTEIN  Wolfgang FICHTNER  
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pp.1968-1976  INVITED PAPER
HFET and HBT Modelling for Circuit Analysis
Iltcho ANGELOV  
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pp.1977-1984  INVITED PAPER
Field Configurable Self-Assembly: A New Heterogeneous Integration Technology
Alan O'RIORDAN  Gareth REDMOND  Thierry DEAN  Mathias PEZ  
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pp.1985-1993  PAPER
Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors
Taiichi OTSUJI  Yoshihiro KANAMARU  Hajime KITAMURA  Mitsuru MATSUOKA  Osamu OGAWARA  
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pp.1994-1999  PAPER
Terahertz Time Domain Spectroscopy of Epitaxially Grown Silicon Germanium
Jimpei TABATA  Kouichi HIRANAKA  Tohru SAITOH  Takeshi NAGASHIMA  Masanori HANGYO  
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pp.2000-2003  PAPER
Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs
Hiroto KITABAYASHI  Suehiro SUGITANI  Yoshino K. FUKAI  Yasuro YAMANE  Takatomo ENOKI  
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pp.2004-2009  PAPER
Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure
Naohiro TSURUMI  Motonori ISHII  Masaaki NISHIJIMA  Manabu YANAGIHARA  Tsuyoshi TANAKA  Daisuke UEDA  
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pp.2010-2014  PAPER
First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs
Xin ZHU  Dimitris PAVLIDIS  Guangyuan ZHAO  Philippe BOVE  Hacene LAHRECHE  Robert LANGER  
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pp.2015-2021  PAPER
Analysis of a Phase Factor of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures
Hideo TAKEUCHI  Yoshitsugu YAMAMOTO  Ryo HATTORI  Takahide ISHIKAWA  Masaaki NAKAYAMA  
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pp.2022-2026  PAPER
Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector
Toshinobu MATSUNO  Atsuhiko KANDA  Tsuyoshi TANAKA  
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pp.2027-2031  PAPER
A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si
Guangyuan ZHAO  William SUTTON  Dimitris PAVLIDIS  Edwin L. PINER  Johannes SCHWANK  Seth HUBBARD  
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pp.2032-2038  PAPER
Reliability Analysis of GaN-Based LEDs for Solid State Illumination
Gaudenzio MENEGHESSO  Simone LEVADA  Roberto PIEROBON  Fabiana RAMPAZZO  Enrico ZANONI  Anna CAVALLINI  Manfredo MANFREDI  Shawn DU  Ivan ELIASHEVICH  
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pp.2039-2042  PAPER
Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT
Yoshifumi KAWAKAMI  Naohiro KUZE  Jin-Ping AO  Yasuo OHNO  
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pp.2043-2050  PAPER
Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al2O3 Insulated Gate
Shinya OOTOMO  Hideki HASEGAWA  Tamotsu HASHIZUME  
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pp.2051-2057  PAPER
High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors
Jin-Ping AO  Daigo KIKUTA  Naotaka KUBOTA  Yoshiki NAOI  Yasuo OHNO  
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pp.2058-2064  PAPER
Low Noise and Low Distortion Performances of an AlGaN/GaN HFET
Yutaka HIROSE  Yoshito IKEDA  Motonori ISHII  Tomohiro MURATA  Kaoru INOUE  Tsuyoshi TANAKA  Hiroyasu ISHIKAWA  Takashi EGAWA  Takashi JIMBO  
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pp.2065-2070  PAPER
Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs
Takashi INOUE  Yuji ANDO  Kensuke KASAHARA  Yasuhiro OKAMOTO  Tatsuo NAKAYAMA  Hironobu MIYAMOTO  Masaaki KUZUHARA  
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pp.2071-2076  PAPER
High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates
Masahiro SAKAI  Kenta ASANO  Subramaniam ARULKUMARAN  Hiroyasu ISHIKAWA  Takashi EGAWA  Takashi JIMBO  Tomohiko SHIBATA  Mitsuhiro TANAKA  Osamu ODA  
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pp.2077-2081  PAPER
Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE
Makoto MIYOSHI  Masahiro SAKAI  Hiroyasu ISHIKAWA  Takashi EGAWA  Takashi JIMBO  Mitsuhiro TANAKA  Osamu ODA  
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pp.2082-2084  PAPER
Low-Temperature MBE Growth of a TlGaAs/GaAs Multiple Quantum-Well Structure
Naoki NISHIMOTO  Nobuhiro KOBAYASHI  Naoyuki KAWASAKI  Yasuaki HIGUCHI  Yasutomo KAJIKAWA  
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Regular Section

pp.2085-2096  PAPER-Electromagnetic Theory
Calculation of Sommerfeld Integrals for Modeling Vertical Dipole Array Antenna for Borehole Radar
Satoshi EBIHARA  Weng Cho CHEW  
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pp.2097-2102  PAPER-Lasers, Quantum Electronics
Adaptive On-Line Frequency Stabilization System for Laser Diodes Based on Genetic Algorithm
Shintaro HISATAKE  Naoto HAMAGUCHI  Takahiro KAWAMOTO  Wakao SASAKI  
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pp.2103-2110  PAPER-Optoelectronics
All-Optical Interconnection Device with Photorefractive Semi-Linear Resonator
Satoshi HONMA  Atsushi OKAMOTO  
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pp.2111-2121  PAPER-Optoelectronics
Deformation of the Brillouin Gain Spectrum Caused by Parabolic Strain Distribution and Resulting Measurement Error in BOTDR Strain Measurement System
Hiroshi NARUSE  Mitsuhiro TATEDA  Hiroshige OHNO  Akiyoshi SHIMADA  
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pp.2122-2128  PAPER-Electronic Circuits
A CMOS 33-mW 100-MHz 80-dB SFDR Sample-and-Hold Amplifier
Cheng-Chung HSU  Jieh-Tsorng WU  
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pp.2129-2136  PAPER-Electronic Components
Parametric Design for Resin Self-Alignment Capability
Jong-Min KIM  Kozo FUJIMOTO  
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pp.2137-2144  PAPER-Integrated Electronics
Randomized Caches for Power-Efficiency
Hans VANDIERENDONCK  Koen De BOSSCHERE  
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pp.2145-2150  LETTER-Electromagnetic Theory
Radiation Pattern of the Rectangular Microstrip Antenna on Anisotropy Substrates with an Air Gap and Dielectric Superstrate
Joong Han YOON  Hwa Choon LEE  Kyung Sup KWAK  
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pp.2151-2153  LETTER-Microwaves, Millimeter-Waves
Improved Doubly Tapered Electromagnetic Periodic Structure (EPS) for Bandstop Filter Applications
Man Long HER  Yu Zhen WANG  Yi Chyun CHIOU  Fan Hsi KUNG  
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