IEICE Trans

IEICE TRANSACTIONS on Electronics

Volume E86-C No.10 (Publication Date:2003/10/01)

Special Issue on Heterostructure Microelectronics with TWHM2003

pp.1907-1907 FOREWORD FOREWORD Yasuo OHNO
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pp.1908-1910 INVITED PAPER HEMT: Looking Back at Its Successful Commercialization Takashi MIMURA
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pp.1911-1915 INVITED PAPER Current Status and Future Prospects of Semiconductor Terahertz Electronics Hans L. HARTNAGEL Manuel RODRIGUEZ-GIRONES
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pp.1916-1922 INVITED PAPER Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems Toshihide SUZUKI Yasuhiro NAKASHA Hideki KANO Masaru SATO Satoshi MASUDA Ken SAWADA Kozo MAKIYAMA Tsuyoshi TAKAHASHI Tatsuya HIROSE Naoki HARA Masahiko TAKIGAWA
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pp.1923-1928 INVITED PAPER Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density Minoru IDA Kenji KURISHIMA Noriyuki WATANABE
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pp.1929-1934 INVITED PAPER Type-II Base-Collector Performance Advantages and Limitations in High-Speed NpN Double Heterojunction Bipolar Transistors (DHBTs) C. R. BOLOGNESI Martin W. DVORAK Simon P. WATKINS
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pp.1935-1942 INVITED PAPER Novel High-Throughput Plasma Enhanced Growth of SiGe in a 200 mm/300 mm Single Wafer Cluster Tool Juergen RAMM Hans von KANEL
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pp.1943-1948 INVITED PAPER Hetero-Interface Properties of SiO₂/4H-SiC on Various Crystal Orientations Hiroyuki MATSUNAMI Tsunenobu KIMOTO Hiroshi YANO
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pp.1949-1954 INVITED PAPER RF Performance of Diamond Surface-Channel Field-Effect Transistors Hitoshi UMEZAWA Shingo MIYAMOTO Hiroki MATSUDAIRA Hiroaki ISHIZAKA Kwang-Soup SONG Minoru TACHIKI Hiroshi KAWARADA
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pp.1955-1959 INVITED PAPER High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire Ilesanmi ADESIDA Vipan KUMAR Jinwei YANG Muhammed Asif KHAN
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pp.1960-1967 INVITED PAPER TCAD Challenges for Heterostructure Microelectronics Eugeny LYUMKIS Rimvydas MICKEVICIUS Oleg PENZIN Boris POLSKY Karim El SAYED Andreas WETTSTEIN Wolfgang FICHTNER
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pp.1968-1976 INVITED PAPER HFET and HBT Modelling for Circuit Analysis Iltcho ANGELOV
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pp.1977-1984 INVITED PAPER Field Configurable Self-Assembly: A New Heterogeneous Integration Technology Alan O'RIORDAN Gareth REDMOND Thierry DEAN Mathias PEZ
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pp.1985-1993 PAPER Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors Taiichi OTSUJI Yoshihiro KANAMARU Hajime KITAMURA Mitsuru MATSUOKA Osamu OGAWARA
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pp.1994-1999 PAPER Terahertz Time Domain Spectroscopy of Epitaxially Grown Silicon Germanium Jimpei TABATA Kouichi HIRANAKA Tohru SAITOH Takeshi NAGASHIMA Masanori HANGYO
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pp.2000-2003 PAPER Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs Hiroto KITABAYASHI Suehiro SUGITANI Yoshino K. FUKAI Yasuro YAMANE Takatomo ENOKI
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pp.2004-2009 PAPER Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure Naohiro TSURUMI Motonori ISHII Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA Daisuke UEDA
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pp.2010-2014 PAPER First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs Xin ZHU Dimitris PAVLIDIS Guangyuan ZHAO Philippe BOVE Hacene LAHRECHE Robert LANGER
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pp.2015-2021 PAPER Analysis of a Phase Factor of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures Hideo TAKEUCHI Yoshitsugu YAMAMOTO Ryo HATTORI Takahide ISHIKAWA Masaaki NAKAYAMA
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pp.2022-2026 PAPER Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector Toshinobu MATSUNO Atsuhiko KANDA Tsuyoshi TANAKA
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pp.2027-2031 PAPER A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si Guangyuan ZHAO William SUTTON Dimitris PAVLIDIS Edwin L. PINER Johannes SCHWANK Seth HUBBARD
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pp.2032-2038 PAPER Reliability Analysis of GaN-Based LEDs for Solid State Illumination Gaudenzio MENEGHESSO Simone LEVADA Roberto PIEROBON Fabiana RAMPAZZO Enrico ZANONI Anna CAVALLINI Manfredo MANFREDI Shawn DU Ivan ELIASHEVICH
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pp.2039-2042 PAPER Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT Yoshifumi KAWAKAMI Naohiro KUZE Jin-Ping AO Yasuo OHNO
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pp.2043-2050 PAPER Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al₂O₃ Insulated Gate Shinya OOTOMO Hideki HASEGAWA Tamotsu HASHIZUME
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pp.2051-2057 PAPER High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors Jin-Ping AO Daigo KIKUTA Naotaka KUBOTA Yoshiki NAOI Yasuo OHNO
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pp.2058-2064 PAPER Low Noise and Low Distortion Performances of an AlGaN/GaN HFET Yutaka HIROSE Yoshito IKEDA Motonori ISHII Tomohiro MURATA Kaoru INOUE Tsuyoshi TANAKA Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO
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pp.2065-2070 PAPER Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs Takashi INOUE Yuji ANDO Kensuke KASAHARA Yasuhiro OKAMOTO Tatsuo NAKAYAMA Hironobu MIYAMOTO Masaaki KUZUHARA
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pp.2071-2076 PAPER High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates Masahiro SAKAI Kenta ASANO Subramaniam ARULKUMARAN Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Tomohiko SHIBATA Mitsuhiro TANAKA Osamu ODA
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pp.2077-2081 PAPER Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE Makoto MIYOSHI Masahiro SAKAI Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Mitsuhiro TANAKA Osamu ODA
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pp.2082-2084 PAPER Low-Temperature MBE Growth of a TlGaAs/GaAs Multiple Quantum-Well Structure Naoki NISHIMOTO Nobuhiro KOBAYASHI Naoyuki KAWASAKI Yasuaki HIGUCHI Yasutomo KAJIKAWA
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Regular Section

pp.2085-2096 PAPER-Electromagnetic Theory Calculation of Sommerfeld Integrals for Modeling Vertical Dipole Array Antenna for Borehole Radar Satoshi EBIHARA Weng Cho CHEW
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pp.2097-2102 PAPER-Lasers, Quantum Electronics Adaptive On-Line Frequency Stabilization System for Laser Diodes Based on Genetic Algorithm Shintaro HISATAKE Naoto HAMAGUCHI Takahiro KAWAMOTO Wakao SASAKI
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pp.2103-2110 PAPER-Optoelectronics All-Optical Interconnection Device with Photorefractive Semi-Linear Resonator Satoshi HONMA Atsushi OKAMOTO
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pp.2111-2121 PAPER-Optoelectronics Deformation of the Brillouin Gain Spectrum Caused by Parabolic Strain Distribution and Resulting Measurement Error in BOTDR Strain Measurement System Hiroshi NARUSE Mitsuhiro TATEDA Hiroshige OHNO Akiyoshi SHIMADA
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pp.2122-2128 PAPER-Electronic Circuits A CMOS 33-mW 100-MHz 80-dB SFDR Sample-and-Hold Amplifier Cheng-Chung HSU Jieh-Tsorng WU
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pp.2129-2136 PAPER-Electronic Components Parametric Design for Resin Self-Alignment Capability Jong-Min KIM Kozo FUJIMOTO
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pp.2137-2144 PAPER-Integrated Electronics Randomized Caches for Power-Efficiency Hans VANDIERENDONCK Koen De BOSSCHERE
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pp.2145-2150 LETTER-Electromagnetic Theory Radiation Pattern of the Rectangular Microstrip Antenna on Anisotropy Substrates with an Air Gap and Dielectric Superstrate Joong Han YOON Hwa Choon LEE Kyung Sup KWAK
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pp.2151-2153 LETTER-Microwaves, Millimeter-Waves Improved Doubly Tapered Electromagnetic Periodic Structure (EPS) for Bandstop Filter Applications Man Long HER Yu Zhen WANG Yi Chyun CHIOU Fan Hsi KUNG
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