Online ISSN : 

IEICE TRANSACTIONS on Electronics
Volume E82-C No.3  (Publication Date:1999/03/25)
Previous | 
Next
Special Issue on Ultra-High-Speed IC and LSI Technology

pp.407-408  FOREWORD
FOREWORD
Junko AKAGI  
Summary | Full Text:PDF >>
Buy this Article


pp.409-418  INVITED PAPER
Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems
Yohtaro UMEDA  Takatomo ENOKI  Taiichi OTSUJI  Tetsuya SUEMITSU  Haruki YOKOYAMA  Yasunobu ISHII  
Summary | Full Text:PDF >>
Buy this Article


pp.419-427  INVITED PAPER
High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs
Hiroshi MASUDA  Kiyoshi OUCHI  Akihisa TERANO  Hideyuki SUZUKI  Koichi WATANABE  Tohru OKA  Hirokazu MATSUBARA  Tomonori TANOUE  
Summary | Full Text:PDF >>
Buy this Article


pp.428-437  INVITED PAPER
Design Innovations for Multi-Gigahertz-Rate Communication Circuits with Deep-Submicron CMOS Technology
Masakazu KURISU  Muneo FUKAISHI  Hiroshi ASAZAWA  Masato NISHIKAWA  Kazuyuki NAKAMURA  Michio YOTSUYANAGI  
Summary | Full Text:PDF >>
Buy this Article


pp.438-447  INVITED PAPER
Interface Technologies for Memories and ASICs -- Review and Future Direction --
Yasuhiro KONISHI  Yasunobu NAKASE  Katsushi ASAHINA  Makoto TANIGUCHI  Michihiro YAMADA  
Summary | Full Text:PDF >>
Buy this Article


pp.448-455  PAPER-Compound Semiconductor Devices
AlGaAs/InGaAs HBT IC Modules for 40-Gb/s Optical Receiver
Risato OHHIRA  Yasushi AMAMIYA  Takaki NIWA  Nobuo NAGANO  Takeshi TAKEUCHI  Chiharu KURIOKA  Tomohiro CHUZENJI  Kiyoshi FUKUCHI  
Summary | Full Text:PDF >>
Buy this Article


pp.456-464  PAPER-Compound Semiconductor Devices
Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit
Koichi MURATA  Taiichi OTSUJI  Takatomo ENOKI  Yohtaro UMEDA  Mikio YONEYAMA  
Summary | Full Text:PDF >>
Buy this Article


pp.465-474  PAPER-Compound Semiconductor Devices
AlGaAs/GaAs HBT ICs for 20-Gb/s Optical Transmission Systems
Nobuo NAGANO  Masaaki SODA  Hiroshi TEZUKA  Tetsuyuki SUZAKI  Kazuhiko HONJO  
Summary | Full Text:PDF >>
Buy this Article


pp.475-482  PAPER-Compound Semiconductor Devices
Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding
Hiroyuki KIKUCHI  Hideki TSUNETSUGU  Makoto HIRANO  Satoshi YAMAGUCHI  Yuhki IMAI  
Summary | Full Text:PDF >>
Buy this Article


pp.483-490  PAPER-Compound Semiconductor Devices
5 Gsps Oversampling Analog-to-Digital Converters with Polarity Alternating Feedback Comparator
Takumi MIYASHITA  Alfredo OLMOS  Mizuhisa NIHEI  Yuu WATANABE  
Summary | Full Text:PDF >>
Buy this Article


pp.491-497  PAPER-Compound Semiconductor Devices
0.21-fJ GaAs DCFL Circuits Using 0.2-µm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs
Shigeki WADA  Masatoshi TOKUSHIMA  Masaoki ISHIKAWA  Nobuhide YOSHIDA  Masahiro FUJII  Tadashi MAEDA  
Summary | Full Text:PDF >>
Buy this Article


pp.498-503  PAPER-Silicon Devices
2.5 Gb/s 1:8 DEMUX IC Composed of 0.15 µm Single-Gate CMOS
Toshiyuki OCHIAI  Hideaki MATSUHASHI  Hiroshi HOGA  Satoshi NISHIKAWA  
Summary | Full Text:PDF >>
Buy this Article


pp.504-510  PAPER-Silicon Devices
A Flip-Flop Circuit with a Directly Controlled Emitter-Follower and a Level Stabilizer for Low-Power Prescalers
Hisayasu SATO  Nagisa SASAKI  Takahiro MIKI  
Summary | Full Text:PDF >>
Buy this Article


pp.511-518  PAPER-Silicon Devices
Low-Power 2.5-Gb/s Si-Bipolar IC Chipset for Optical Receivers and Transmitters Using Low-Voltage and Adjustment-Free Circuit Techniques
Masaki HIROSE  Keiji KISHINE  Haruhiko ICHINO  Noboru ISHIHARA  
Summary | Full Text:PDF >>
Buy this Article


pp.519-525  PAPER-Silicon Devices
A Dynamic Reference Single-Ended ECL Input Interface Circuit for MCM-Based 80-Gbps ATM Switch
Ryusuke KAWANO  Naoaki YAMANAKA  Eiji OKI  Tomoaki KAWAMURA  
Summary | Full Text:PDF >>
Buy this Article


pp.526-530  PAPER-Silicon Devices
Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy
Shuji ITO  Toshiyuki NAKAMURA  Hiroshi HOGA  Satoshi NISHIKAWA  Hirokazu FUJIMAKI  Yumiko HIJIKATA  Yoshihisa OKITA  
Summary | Full Text:PDF >>
Buy this Article


pp.531-537  PAPER-Silicon Devices
An FET Coupled Logic (FCL) Circuit for Multi-Gb/s, Low Power and Low Voltage Serial Interface BiCMOS LSIs
Hitoshi OKAMURA  Masaharu SATO  Satoshi NAKAMURA  Shuji KISHI  Kunio KOKUBU  
Summary | Full Text:PDF >>
Buy this Article


pp.538-543  PAPER-Silicon Devices
High Frequency Characteristics of Dynamic Threshold-Voltage MOSFET (DTMOS) under Ultra-Low Supply Voltage
Tetsu TANAKA  Youichi MOMIYAMA  Toshihiro SUGII  
Summary | Full Text:PDF >>
Buy this Article


pp.544-552  PAPER-Silicon Devices
Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM
Fukashi MORISHITA  Yasuo YAMAGUCHI  Takahisa EIMORI  Toshiyuki OASHI  Kazutami ARIMOTO  Yasuo INOUE  Tadashi NISHIMURA  Michihiro YAMADA  
Summary | Full Text:PDF >>
Buy this Article


pp.553-558  PAPER-Silicon Devices
Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology
Mitsuru HARADA  Tsuneo TSUKAHARA  
Summary | Full Text:PDF >>
Buy this Article


Regular Section

pp.559-561  LETTER-Electronic Circuits
A 22-Gbit/s Static Decision IC Made with a Novel D-Type Flip-Flop
Koichi NARAHARA  Taiichi OTSUJI  Masami TOKUMITSU  
Summary | Full Text:PDF >>
Buy this Article


pp.562-564  LETTER-Opto-Electronics
Analysis and Simulation of Fiber Optic Temperature Sensor Using Mode-Division Multiplex
Manabu YOSHIKAWA  
Summary | Full Text:PDF >>
Buy this Article


Previous | 
Next
go to Page Top