IEICE Trans

IEICE TRANSACTIONS on Electronics

Volume E79-C No.4 (Publication Date:1996/04/25)

Special Issue on Ultra-High-Speed LSIs

pp.457-458 FOREWORD FOREWORD Yasuo OHNO
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pp.459-471 INVITED PAPER High-Throughput Technologies for Video Signal Processor (VSP) LSIs Tadayoshi ENOMOTO
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pp.472-481 INVITED PAPER Trends in High-Speed DRAM Architectures Masaki KUMANOYA Toshiyuki OGAWA Yasuhiro KONISHI Katsumi DOSAKA Kazuhiro SHIMOTORI
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pp.482-488 INVITED PAPER Electro-Optic Testing Technology for High-Speed LSIs Tadao NAGATSUMA
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pp.489-495 PAPER 1.4 GHz Natural Air-Cooling GaAs Standard Cell LSIs for 10 Gbit/s Optical Communication Systems Yasunori OGAWA Kuniichi IKEMURA Shouhei SEKI
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pp.496-502 PAPER A Decision Circuit with Phase Detectors for 10-Gb/s Optical Communication Systems Makoto SHIKATA Akira NISHINO Ryoji SHIGEMASA Tamotsu KIMURA Takashi USHIKUBO
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pp.503-511 PAPER GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer Chip Sets Masaaki SHIMADA Norio HIGASHISAKA Akira OHTA Kenji HOSOGI Kazuo KUBO Noriyuki TANINO Tadashi TAKAGI Fuminobu HIDANI Osamu ISHIHARA
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pp.512-517 PAPER A 1.3 V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10 Gbps Masahiro FUJII Tadashi MAEDA Yasuo OHNO Masatoshi TOKUSHIMA Masaoki ISHIKAWA Muneo FUKAISHI Hikaru HIDA
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pp.518-523 PAPER Aluminum-Graded-Base PNp AlGaAs/GaAs Heterojunction Transistor with 37 GHz Cut-Off Frequency Atsushi KAMEYAMA Alan MASSENGALE Changhong DAI James S. HARRIS, Jr.
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pp.524-529 PAPER A 2.6-Gbps/pin SIMOX-CMOS Low-Voltage-Swing Interface Circuit Yusuke OHTOMO Masafumi NOGAWA Masayuki INO
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pp.530-537 PAPER A 2.6-ns 64-b Fast and Small CMOS Adder Hiroyuki MORINAKA Hiroshi MAKINO Yasunobu NAKASE Hiroaki SUZUKI Koichiro MASHIKO Tadashi SUMI
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pp.538-548 PAPER A Design of High-Speed 4-2 Compressor for Fast Multiplier Hiroshi MAKINO Hiroaki SUZUKI Hiroyuki MORINAKA Yasunobu NAKASE Hirofumi SHINOHARA Koichiro MASHIKO Tadashi SUMI Yasutaka HORIBA
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pp.549-553 PAPER A 40GHz f_T SATURN Transistor Using 2-Step Epitaxial Base Technology Hirokazu FUJIMAKI Koji YAMONO Kenichi SUZUKI
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pp.554-559 PAPER Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications Yukihiro KIYOTA Tohru NAKAMURA Seiji SUZUKI Taroh INADA
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Regular Section

pp.560-567 PAPER-Electronic Circuits Fundamental Device and Circuits for Synaptic Connections in Self-Organizing Neural Networks Kohji HOSONO Kiyotaka TSUJI Kazuhiro SHIBAO Eiji IO Hiroo YONEZU Naoki OHSHIMA Kangsa PAK
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pp.568-572 PAPER-Semiconductor Materials and Devices Inlaid Cu Interconnects Employing Ti-Si-N Barrier Metal for ULSI Applications Tadashi IIJIMA Yoshiaki SHIMOOKA Kyoichi SUGURO
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pp.573-579 PAPER-Semiconductor Materials and Devices A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs Takuo KASHIWA Takayuki KATOH Naohito YOSHIDA Hiroyuki MINAMI Toshiaki KITANO Makio KOMARU Noriyuki TANINO Tadashi TAKAGI Osamu ISHIHARA
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pp.580-586 PAPER-Electronic Displays A Study on MgO Powder and MgO Liquid Binder in the Screen-Printed Protective Layer for AC-PDPs Ichiro KOIWA Takao KANEHARA Juro MITA
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pp.587-592 PAPER-Electromagnetic Theory A Two-Waveguide Tapered Velocity Coupler for a Variable Divider of Optical Power Masahiro GESHIRO Toshiaki KITAMURA Tadashi YOSHIKAWA Shinnosuke SAWA
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pp.593-596 LETTER-Semiconductor Materials and Devices Lateral IGBT Structure on the SOI Film with the Collector-Short Region for Improved Blocking Capability Hitoshi SUMIDA Atsuo HIRABAYASHI
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