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IEICE TRANSACTIONS on Electronics
Volume E79-C No.4  (Publication Date:1996/04/25)
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Special Issue on Ultra-High-Speed LSIs

pp.457-458  FOREWORD
FOREWORD
Yasuo OHNO  
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pp.459-471  INVITED PAPER
High-Throughput Technologies for Video Signal Processor (VSP) LSIs
Tadayoshi ENOMOTO  
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pp.472-481  INVITED PAPER
Trends in High-Speed DRAM Architectures
Masaki KUMANOYA  Toshiyuki OGAWA  Yasuhiro KONISHI  Katsumi DOSAKA  Kazuhiro SHIMOTORI  
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pp.482-488  INVITED PAPER
Electro-Optic Testing Technology for High-Speed LSIs
Tadao NAGATSUMA  
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pp.489-495  PAPER
1.4 GHz Natural Air-Cooling GaAs Standard Cell LSIs for 10 Gbit/s Optical Communication Systems
Yasunori OGAWA  Kuniichi IKEMURA  Shouhei SEKI  
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pp.496-502  PAPER
A Decision Circuit with Phase Detectors for 10-Gb/s Optical Communication Systems
Makoto SHIKATA  Akira NISHINO  Ryoji SHIGEMASA  Tamotsu KIMURA  Takashi USHIKUBO  
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pp.503-511  PAPER
GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer Chip Sets
Masaaki SHIMADA  Norio HIGASHISAKA  Akira OHTA  Kenji HOSOGI  Kazuo KUBO  Noriyuki TANINO  Tadashi TAKAGI  Fuminobu HIDANI  Osamu ISHIHARA  
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pp.512-517  PAPER
A 1.3 V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10 Gbps
Masahiro FUJII  Tadashi MAEDA  Yasuo OHNO  Masatoshi TOKUSHIMA  Masaoki ISHIKAWA  Muneo FUKAISHI  Hikaru HIDA  
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pp.518-523  PAPER
Aluminum-Graded-Base PNp AlGaAs/GaAs Heterojunction Transistor with 37 GHz Cut-Off Frequency
Atsushi KAMEYAMA  Alan MASSENGALE  Changhong DAI  James S. HARRIS, Jr.  
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pp.524-529  PAPER
A 2.6-Gbps/pin SIMOX-CMOS Low-Voltage-Swing Interface Circuit
Yusuke OHTOMO  Masafumi NOGAWA  Masayuki INO  
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pp.530-537  PAPER
A 2.6-ns 64-b Fast and Small CMOS Adder
Hiroyuki MORINAKA  Hiroshi MAKINO  Yasunobu NAKASE  Hiroaki SUZUKI  Koichiro MASHIKO  Tadashi SUMI  
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pp.538-548  PAPER
A Design of High-Speed 4-2 Compressor for Fast Multiplier
Hiroshi MAKINO  Hiroaki SUZUKI  Hiroyuki MORINAKA  Yasunobu NAKASE  Hirofumi SHINOHARA  Koichiro MASHIKO  Tadashi SUMI  Yasutaka HORIBA  
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pp.549-553  PAPER
A 40GHz fT SATURN Transistor Using 2-Step Epitaxial Base Technology
Hirokazu FUJIMAKI  Koji YAMONO  Kenichi SUZUKI  
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pp.554-559  PAPER
Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications
Yukihiro KIYOTA  Tohru NAKAMURA  Seiji SUZUKI  Taroh INADA  
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Regular Section

pp.560-567  PAPER-Electronic Circuits
Fundamental Device and Circuits for Synaptic Connections in Self-Organizing Neural Networks
Kohji HOSONO  Kiyotaka TSUJI  Kazuhiro SHIBAO  Eiji IO  Hiroo YONEZU  Naoki OHSHIMA  Kangsa PAK  
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pp.568-572  PAPER-Semiconductor Materials and Devices
Inlaid Cu Interconnects Employing Ti-Si-N Barrier Metal for ULSI Applications
Tadashi IIJIMA  Yoshiaki SHIMOOKA  Kyoichi SUGURO  
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pp.573-579  PAPER-Semiconductor Materials and Devices
A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
Takuo KASHIWA  Takayuki KATOH  Naohito YOSHIDA  Hiroyuki MINAMI  Toshiaki KITANO  Makio KOMARU  Noriyuki TANINO  Tadashi TAKAGI  Osamu ISHIHARA  
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pp.580-586  PAPER-Electronic Displays
A Study on MgO Powder and MgO Liquid Binder in the Screen-Printed Protective Layer for AC-PDPs
Ichiro KOIWA  Takao KANEHARA  Juro MITA  
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pp.587-592  PAPER-Electromagnetic Theory
A Two-Waveguide Tapered Velocity Coupler for a Variable Divider of Optical Power
Masahiro GESHIRO  Toshiaki KITAMURA  Tadashi YOSHIKAWA  Shinnosuke SAWA  
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pp.593-596  LETTER-Semiconductor Materials and Devices
Lateral IGBT Structure on the SOI Film with the Collector-Short Region for Improved Blocking Capability
Hitoshi SUMIDA  Atsuo HIRABAYASHI  
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