Yuto NORIFUSA


Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM
Yuto NORIFUSA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 847-853
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Vertical type 1T-DRAMplanar type 1T-DRAMfloating body DRAMretention
 Summary | Full Text:PDF(1.4MB)

Impact of Floating Body Type DRAM with the Vertical MOSFET
Yuto NORIFUSA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 705-711
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
floating body type DRAM1T-DRAMmemory architecturevertical MOSFET3D structured deviceLSI
 Summary | Full Text:PDF(800.7KB)

Scalability of Vertical MOSFETs in Sub-10 nm Generation and Its Mechanism
Tetsuo ENDOH Yuto NORIFUSA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 594-597
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Vertical MOSFETsub-10 nmdriving currentcutoff leakage currentcurrent density
 Summary | Full Text:PDF(665.9KB)

Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor
Tetsuo ENDOH Yuto NORIFUSA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 598-602
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
nano wire MOS transistorself-heating effecttemperaturenano
 Summary | Full Text:PDF(854.9KB)