Yuto NORIFUSA

Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM
Yuto NORIFUSA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 847-853
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Vertical type 1T-DRAM, planar type 1T-DRAM, floating body DRAM, retention, 
 Summary | Full Text:PDF
Impact of Floating Body Type DRAM with the Vertical MOSFET
Yuto NORIFUSA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 705-711
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
floating body type DRAM, 1T-DRAM, memory architecture, vertical MOSFET, 3D structured device, LSI, 
 Summary | Full Text:PDF
Scalability of Vertical MOSFETs in Sub-10 nm Generation and Its Mechanism
Tetsuo ENDOH Yuto NORIFUSA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 594-597
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Vertical MOSFET, sub-10 nm, driving current, cutoff leakage current, current density, 
 Summary | Full Text:PDF
Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor
Tetsuo ENDOH Yuto NORIFUSA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 598-602
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
nano wire MOS transistor, self-heating effect, temperature, nano, 
 Summary | Full Text:PDF