Yukihiro KIYOTA


Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications
Yukihiro KIYOTA Tohru NAKAMURA Seiji SUZUKI Taroh INADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 554-559
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
RVDshallow-junction bipolarMOS
 Summary | Full Text:PDF

Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
Tohru NAKAMURA Takeo SHIBA Takahiro ONAI Takashi UCHINO Yukihiro KIYOTA Katsuyoshi WASHIO Noriyuki HOMMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1154-1164
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
silicon bipolardouble polysiliconhigh speedself-alignment
 Summary | Full Text:PDF

Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD)
Yukihiro KIYOTA Tohru NAKAMURA Taroh INADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 362-366
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
PMOSFETRVDshallow-junction
 Summary | Full Text:PDF

Fabrication of SiN Films by Double Tubed Coaxial Line Type Microwave Plasma Chemical Vapor Deposition
Yukihiro KIYOTA Kouji NUMADA Isamu KATO 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1987/04/25
Vol. E70-E  No. 4  pp. 334-335
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1987 National Convention IEICE)
Category: Components and Materials
Keyword: 
 Summary | Full Text:PDF