Yuji ISEKI


Millimeter-Wave Monolithic GaAs HEMT Medium-Power Amplifier Having Low-Loss, CRC High-Pass Equalizer Circuits
Naoko ONO Ken ONODERA Kazuhiro ARAI Keiichi YAMAGUCHI Hiroyuki YOSHINAGA Yuji ISEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5  pp. 733-741
Type of Manuscript:  Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
K-banddriver amplifierfilter circuitHEMT
 Summary | Full Text:PDF(2.4MB)

Characteristics of GaAs HEMTs with Flip-Chip Interconnections
Naoko ONO Fumio SASAKI Kazuhiro ARAI Hiroyuki YOSHINAGA Yuji ISEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/12/01
Vol. E86-C  No. 12  pp. 2452-2461
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Trends on Microwave and Millimeter Wave Application Technology)
Category: Amplifier
Keyword: 
GaAsHEMTflip-chip interconnectioncurrent pathinverted microstrip line
 Summary | Full Text:PDF(1.6MB)

V-Band HEMT MMICs Using BCB Thin-Film Layers on GaAs Substrates
Naoko ONO Keiichi YAMAGUCHI Minoru AMANO Masayuki SUGIURA Yuji ISEKI Eiji TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1528-1534
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
Category: 
Keyword: 
BCBthin-film layerV-bandHEMTMMIC
 Summary | Full Text:PDF(801.2KB)