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A Design Technique for a High-Gain, 10-GHz Class-Bandwidth GaAs MESFET Amplifier IC Module
Noboru ISHIHARA Eiichi SANO Yuhki IMAI Hiroyuki KIKUCHI Yasuro YAMANE | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1992/04/25
Vol. E75-C
No. 4
pp. 452-460
Type of Manuscript:
Special Section PAPER (Joint Special Issue on the 1991 VLSI Circuits Symposium)
Category:
Keyword:
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Microwave Characteristic and Application of Au/WSiN GaAs-MESFETs with Neutral Buried p-Layers
Kiyomitsu ONODERA Yuhki IMAI Kazuyoshi ASAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1991/05/25
Vol. E74-C
No. 5
pp. 1197-1201
Type of Manuscript:
Special Section PAPER (Special Issue on the 3rd Asia-Pacific Microwave Conference)
Category: Active Devices and Circuits
Keyword:
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A New Self-Aligned Recessed-Gate GaAs MESFET Using RIBE (Reactive Ion Beam Etching) for Recess Etching
Yuhki IMAI Kuniki OHWADA Yoshihiro IMAMURA | Publication: IEICE TRANSACTIONS (1976-1990)
Publication Date: 1987/10/25
Vol. E70-E
No. 10
pp. 975-980
Type of Manuscript:
PAPER
Category: Semiconductors; Materials and Devices
Keyword:
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