Yuhki IMAI


Quick Development of Multifunctional MMICs by Using Three-Dimensional Masterslice MMIC Technology
Ichihiko TOYODA Makoto HIRANO Masami TOKUMITSU Yuhki IMAI Kenjiro NISHIKAWA Kenji KAMOGAWA Suehiro SUGITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1951-1959
Type of Manuscript:  INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
three-dimensionalMMICmastersliceLMDSquick developmentdown-converter
 Summary | Full Text:PDF

Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding
Hiroyuki KIKUCHI Hideki TSUNETSUGU Makoto HIRANO Satoshi YAMAGUCHI Yuhki IMAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 475-482
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
GaAs MESFETamplifierdistributormicrostrip lineflip chip
 Summary | Full Text:PDF

Three-Dimensional Passive Elements for Compact GaAs MMICs
Makoto HIRANO Yuhki IMAI Ichihiko TOYODA Kenjiro NISHIKAWA Masami TOKUMITSU Kazuyoshi ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/06/25
Vol. E76-C  No. 6  pp. 961-967
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)
Category: 
Keyword: 
three-dimensionalpassive elementsGaAsMMICs
 Summary | Full Text:PDF

A Design Technique for a High-Gain, 10-GHz Class-Bandwidth GaAs MESFET Amplifier IC Module
Noboru ISHIHARA Eiichi SANO Yuhki IMAI Hiroyuki KIKUCHI Yasuro YAMANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/04/25
Vol. E75-C  No. 4  pp. 452-460
Type of Manuscript:  Special Section PAPER (Joint Special Issue on the 1991 VLSI Circuits Symposium)
Category: 
Keyword: 
 Summary | Full Text:PDF

Microwave Characteristic and Application of Au/WSiN GaAs-MESFETs with Neutral Buried p-Layers
Kiyomitsu ONODERA Yuhki IMAI Kazuyoshi ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/05/25
Vol. E74-C  No. 5  pp. 1197-1201
Type of Manuscript:  Special Section PAPER (Special Issue on the 3rd Asia-Pacific Microwave Conference)
Category: Active Devices and Circuits
Keyword: 
 Summary | Full Text:PDF

A New Self-Aligned Recessed-Gate GaAs MESFET Using RIBE (Reactive Ion Beam Etching) for Recess Etching
Yuhki IMAI Kuniki OHWADA Yoshihiro IMAMURA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1987/10/25
Vol. E70-E  No. 10  pp. 975-980
Type of Manuscript:  PAPER
Category: Semiconductors; Materials and Devices
Keyword: 
 Summary | Full Text:PDF