Youngchang YOON


FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs
Hochul LEE Youngchang YOON Ickhyun SONG Hyungcheol SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 776-779
Type of Manuscript:  Special Section LETTER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
random telegraph signal noiseFN stressflash memoryMOSFET
 Summary | Full Text:PDF

Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs
Hochul LEE Youngchang YOON Seongjae CHO Hyungcheol SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 968-972
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Ultra-Thin Gate Insulators
Keyword: 
trap depthRTNtime constantspoly gate depletion effectsurface potential variation
 Summary | Full Text:PDF