Yoshino K. FUKAI


Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1310-1316
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: III-V High-Speed Devices and Circuits
Keyword: 
InPInGaAsHBTturn-on voltage
 Summary | Full Text:PDF

Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft
Norihide KASHIO Kenji KURISHIMA Yoshino K. FUKAI Shoji YAMAHATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1084-1090
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaAs- and InP-Based Devices
Keyword: 
InP HBTspassivation ledgereliability
 Summary | Full Text:PDF

Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs
Hiroto KITABAYASHI Suehiro SUGITANI Yoshino K. FUKAI Yasuro YAMANE Takatomo ENOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2000-2003
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
double-recessInP-passivation layerHEMTbreakdown voltage
 Summary | Full Text:PDF