Yoshimi YAMASHITA


High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs
Akira ENDOH Yoshimi YAMASHITA Masataka HIGASHIWAKI Kohki HIKOSAKA Takashi MIMURA Satoshi HIYAMIZU Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1328-1334
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InAlAs/InGaAsInPHEMTcutoff frequencylow-temperature fabrication process
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