Yoshiki SAKUMA


InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot(TSR-QD)Technology
Yuji AWANO Yoshiki SAKUMA Yoshihiro SUGIYAMA Takashi SEKIGUCHI Shunichi MUTO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11  pp. 1557-1561
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
nanometer technologyquantum dotMOVPEcathodoluminescencephotoluminescenceself-organization
 Summary | Full Text:PDF(716.3KB)

Selective Growth of GaAs by Pulsed-Jet Epitaxy
Yoshiki SAKUMA Shunich MUTO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1414-1419
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
selective epitaxyatomic layer epitaxy (ALE)MOVPEpulsed-jet epitaxyGaAsSiO2 mask
 Summary | Full Text:PDF(941.4KB)