Yoshikazu OHNO


(Ba0.75Sr0.25)TiO3 Films for 256 Mbit DRAM
Tsuyoshi HORIKAWA Noboru MIKAMI Hiromi ITO Yoshikazu OHNO Tetsuro MAKITA Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 385-391
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
(Ba,Sr)TiO3ferroelectricDRAMsputteringgrain size effect
 Summary | Full Text:PDF

Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method
Yoshikazu OHNO Hiroshi KIMURA Ken-ichiro SONODA Tadashi NISHIMURA Shin-ichi SATOH Hirokazu SAYAMA Shigenori HARA Mikio TAKAI Hirokazu MIYOSHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 399-405
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
soft-errorDRAMmicroprobeprotonmapping
 Summary | Full Text:PDF