Yoshikazu NAKAYAMA


Electromigration and Diffusion of Gold in GaAs IC Interconnections
Akira OHTA Kotaro YAJIMA Norio HIGASHISAKA Tetsuya HEIMA Takayuki HISAKA Ryo HATTORI Yoshikazu NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/11/01
Vol. E85-C  No. 11  pp. 1932-1939
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
electromigrationdiffusionGaAs IChigh temperaturehigh current density
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Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power
Takuo KASHIWA Kazuya YAMAMOTO Takayuki KATOH Takao ISHIDA Takahide ISHIKAWA Yasuo MITSUI Yoshikazu NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/10/25
Vol. E82-C  No. 10  pp. 1831-1838
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
resistive mixerLO powerconversion lossInP HEMTconductance
 Summary | Full Text:PDF

A New Broadband Buffer Circuit Technique and Its Application to a 10-Gbit/s Decision Circuit Using Production-Level 0. 5 µm GaAs MESFETs
Miyo MIYASHITA Naoto ANDOH Kazuya YAMAMOTO Junichi NAKAGAWA Etsuji OMURA Masao AIGA Yoshikazu NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/10/25
Vol. E81-C  No. 10  pp. 1627-1638
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
GaAs MESFETbuffer circuitdecision circuitpeaking inductorsource-follower
 Summary | Full Text:PDF