| Yoshikazu FUJIMORI
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Properties of Ferroelectric Memory with Ir System Materials as Electrodes Naoki IZUMI Yoshikazu FUJIMORI Takashi NAKAMURA Akira KAMISAWA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C
No. 4
pp. 513-517
Type of Manuscript:
Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films) Category: Keyword: ferroelectric thin films, Pb(Zr,Ti)O3, FRAM, fatigue property, imprint property, hysteresis, sol-gel method, Ir system materials, STC, poly-Si plugs, | | Summary | Full Text:PDF | |
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