Yoshihiro IMAMURA


A New Self-Aligned Recessed-Gate GaAs MESFET Using RIBE (Reactive Ion Beam Etching) for Recess Etching
Yuhki IMAI Kuniki OHWADA Yoshihiro IMAMURA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1987/10/25
Vol. E70-E  No. 10  pp. 975-980
Type of Manuscript:  PAPER
Category: Semiconductors; Materials and Devices
Keyword: 
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