Yoshihiro IMAJO


Static Characteristics of GaInAsP/InP Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes (GRIN-SCH QW LDs) Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
Akihiko KASUKAWA Narihito MATSUMOTO Takeshi NAMEGAYA Yoshihiro IMAJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1541-1554
Type of Manuscript:  PAPER
Category: Opto-Electronics
Keyword: 
GRIN-SCH-MQWMOCVDGaInAsP/InPburied heterostructurelaser diodes
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Effect of Well Number in 1.3 µm GaInAsP Graded-Index Separate-Confinement-Heterostructure Multiple-Quantum-Well (GRIN-SCH-MQW) Laser Diodes
Akihiko KASUKAWA Yoshihiro IMAJO Ian John MURGATROYD Hiroshi OKAMOTO 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1990/01/25
Vol. E73-E  No. 1  pp. 59-62
Type of Manuscript:  Special Section PAPER (Special Issue on International Conference on Integrated Optics and Optical Fiber Communication)
Category: Optical Semiconductor Devices and OEICs
Keyword: 
 Summary | Full Text:PDF