Yoshihiro ARIMOTO


A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors
Tetsuro TAMURA Yoshihiro ARIMOTO Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 785-790
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectricsimulation modelpolarization switchinghysteresis
 Summary | Full Text:PDF(426.4KB)

Ti Salicide Process for Subquarter-Micron CMOS Devices
Ken-ichi GOTO Tatsuya YAMAZAKI Yasuo NARA Tetsu FUKANO Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 480-485
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
TiTiSi2salicidesubquarter-micron CMOSgate resistance
 Summary | Full Text:PDF(820.9KB)

High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques
Manabu KOJIMA Atsushi FUKURODA Tetsu FUKANO Naoshi HIGAKI Tatsuya YAMAZAKI Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 572-576
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
SOI bipolar transistorsthin buried layerwafer bondingselective polishing
 Summary | Full Text:PDF(466.6KB)

A 4 GHz Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI
Naoshi HIGAKI Tetsu FUKANO Atsushi FUKURODA Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1453-1458
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
bonded SOIlateral bipolarsidewall self-aligning baseBiCMOSrecrystallization
 Summary | Full Text:PDF(652.4KB)

High-Temperature Operation of nMOSFET on Bonded SOI
Yoshihiro ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1442-1446
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
bonded SOISOI-MOSFETpulse-field-assisted bondingleakagehigh-temperature operation
 Summary | Full Text:PDF(466.7KB)