Yoshihiko SAITOH


NAND-Structured Trench Capacitor Cell Technologies for 256 Mb DRAM and Beyond
Takeshi HAMAMOTO Yutaka ISHIBASHI Masami AOKI Yoshihiko SAITOH Takashi YAMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/07/25
Vol. E78-C  No. 7  pp. 789-796
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Memory Device, Circuit, Architecture and Application Technologies for Multimedia Age)
Category: 
Keyword: 
memoryDRAMtrenchcapacitor
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