Yoshiharu ANDA


K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W
Noboru NEGORO Masayuki KURODA Tomohiro MURATA Masaaki NISHIJIMA Yoshiharu ANDA Hiroyuki SAKAI Tetsuzo UEDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1327-1331
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN MIS-HFETK-bandpower amplifierSi substratehigh-temperature chemical vapor deposition SiN
 Summary | Full Text:PDF

Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET
Satoshi MAKIOKA Yoshiharu ANDA Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12  pp. 2036-2040
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
switch ICGaAsmulti-gateEO probe
 Summary | Full Text:PDF

0.15-µm T-Shaped Gate MODFETs Using BCB as Low-k Spacer
Yoshiharu ANDA Katsuhiko KAWASHIMA Mitsuru NISHITSUJI Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1323-1327
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
GaAsMODFETBCBmillimeter wavelow-k
 Summary | Full Text:PDF