Yoshiaki SANO


Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate
Hideyuki OKITA Toshiharu MARUI Shinichi HOSHI Masanori ITOH Fumihiko TODA Yoshiaki MORINO Isao TAMAI Yoshiaki SANO Shohei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 686-690
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
AlGaN/GaN HEMTscurrent collapseSiNpassivation filmthermal CVD
 Summary | Full Text:PDF(949.9KB)

Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs
Toshiharu MARUI Shinich HOSHI Masanori ITOH Isao TAMAI Fumihiko TODA Hideyuki OKITA Yoshiaki SANO Shohei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1009-1014
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword: 
AlGaN/GaN HEMTsthermal CVD SiNcurrent collapsepassivation filmgate insulator
 Summary | Full Text:PDF(852.4KB)

Influence of NH3-Plasma Pretreatment before Si3N4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs
Shinichi HOSHI Toshiharu MARUI Masanori ITOH Yoshiaki SANO Shouhei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1052-1056
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN-HEMTscurrent collapseSi3N4 passivation filmNH3-plasma pretreatment
 Summary | Full Text:PDF(843.1KB)

A GaAs 88 Self-Routing Switch LSI for ATM Switching System
Shouhei SEKI Hiroyuki YAMADA Masanori TSUNOTANI Yoshiaki SANO Yasushi KAWAKAMI Masahiro AKIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10  pp. 1127-1132
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
GaAsB-ISDNATMhardware switch
 Summary | Full Text:PDF(748.3KB)

Isolation Characteristics in GaAs ICs on Semi-Insulating Substrate
Kazuyuki INOKUCHI Yuko SEKINO-ITOH Yoshiaki SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10  pp. 1154-1164
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
isolationleaksidegateM-i-nLSI
 Summary | Full Text:PDF(891.8KB)