IEICE Trans

Yoshiaki KITAURA

Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications Yoshiko Matsuo IKEDA Masami NAGAOKA Hirotsugu WAKIMOTO Toshiki SESHITA Masakatsu MIHARA Misao YOSHIMURA Yoshikazu TANABE Keiji OYA Yoshiaki KITAURA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/07/25 Vol. E82-C No. 7 pp. 1086-1091 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology) Category: Active Devices and Circuits Keyword: gallium arsenide, linear power amplifier, single voltage supply, MESFET, ISM, ETC,
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Single Low 2. 4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1. 9-GHz PHS Applications Masami NAGAOKA Hirotsugu WAKIMOTO Toshiki SESHITA Katsue K. KAWAKYU Yoshiaki KITAURA Atsushi KAMEYAMA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/25 Vol. E81-C No. 6 pp. 911-915 Type of Manuscript: Special Section LETTER (Special Issue on Microwave and Millimeter-Wave Module Technology) Category: Keyword: power amplifier, gallium arsenide, PHS, low distortion, variable gain, single voltage supply,
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0. 012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications Masami NAGAOKA Hironori NAGASAWA Katsue K. KAWAKYU Kenji HONMYO Shinji ISHIDA Yoshiaki KITAURA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/25 Vol. E81-C No. 6 pp. 985-992 Type of Manuscript: PAPER Category: Microwave and Millimeter Wave Technology Keyword: power amplifier, gallium arsenide, PHS, low distortion, single voltage supply, surface mount package,
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A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs Kazuya NISHIHORI Atsushi KAMEYAMA Yoshiaki KITAURA Yoshikazu TANABE Masakatsu MIHARA Misao YOSHIMURA Mayumi HIROSE Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/12/25 Vol. E80-C No. 12 pp. 1586-1591 Type of Manuscript: Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies) Category: Keyword: GaAs MESFET, buried channel, ion-implantation, MMIC, power-added efficiency, noise figure,
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Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS Tadahiro SASAKI Shoji OTAKA Tadahiko MAEDA Toshiyuki UMEDA Kazuya NISHIHORI Atsushi KAMEYAMA Mayumi HIROSE Yoshiaki KITAURA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/25 Vol. E80-C No. 6 pp. 794-799 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices) Category: Keyword: GaAs, direct-conversion, attenuator, modulator, MMIC, MESFET, personal handy phone system,
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A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS Atsushi KAMEYAMA Katsue K.KAWAKYU Yoshiko IKEDA Masami NAGAOKA Kenji ISHIDA Tomohiro NITTA Misao YOSHIMURA Yoshiaki KITAURA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/25 Vol. E80-C No. 6 pp. 788-793 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices) Category: Keyword: MMIC, SPDT switch IC, GaAs MESFET, resonator, single power supply operation, personal handy phone system,
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A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications Masami NAGAOKA Tomotoshi INOUE Katsue KAWAKYU Shuichi OBAYASHI Hiroyuki KAYANO Eiji TAKAGI Yoshikazu TANABE Misao YOSHIMURA Kenji ISHIDA Yoshiaki KITAURA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/04/25 Vol. E78-C No. 4 pp. 424-429 Type of Manuscript: Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits) Category: Analog Circuits Keyword: monolithic power amplifier, gallium arsenide, PHS, single low voltage supply, high linearity,
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GaAs MESFET Circuit Structures Based on Virtual Ground Concept for High-Performance ASICs Shoichi SHIMIZU Yukio KAMATANI Yoshiaki KITAURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/12/25 Vol. E76-C No. 12 pp. 1835-1841 Type of Manuscript: Special Section PAPER (Special Issue on ASICs for Automotive Electronics) Category: Keyword: integrated electronics, electronics circuits, GaAs MESFET, DCFL,
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