Yoshiaki KITAURA


Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications
Yoshiko Matsuo IKEDA Masami NAGAOKA Hirotsugu WAKIMOTO Toshiki SESHITA Masakatsu MIHARA Misao YOSHIMURA Yoshikazu TANABE Keiji OYA Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7  pp. 1086-1091
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
gallium arsenidelinear power amplifiersingle voltage supplyMESFETISMETC
 Summary | Full Text:PDF

Single Low 2. 4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1. 9-GHz PHS Applications
Masami NAGAOKA Hirotsugu WAKIMOTO Toshiki SESHITA Katsue K. KAWAKYU Yoshiaki KITAURA Atsushi KAMEYAMA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 911-915
Type of Manuscript:  Special Section LETTER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: 
Keyword: 
power amplifiergallium arsenidePHSlow distortionvariable gainsingle voltage supply
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0. 012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications
Masami NAGAOKA Hironori NAGASAWA Katsue K. KAWAKYU Kenji HONMYO Shinji ISHIDA Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 985-992
Type of Manuscript:  PAPER
Category: Microwave and Millimeter Wave Technology
Keyword: 
power amplifiergallium arsenidePHSlow distortionsingle voltage supplysurface mount package
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A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs
Kazuya NISHIHORI Atsushi KAMEYAMA Yoshiaki KITAURA Yoshikazu TANABE Masakatsu MIHARA Misao YOSHIMURA Mayumi HIROSE Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12  pp. 1586-1591
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
Category: 
Keyword: 
GaAs MESFETburied channelion-implantationMMICpower-added efficiencynoise figure
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Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS
Tadahiro SASAKI Shoji OTAKA Tadahiko MAEDA Toshiyuki UMEDA Kazuya NISHIHORI Atsushi KAMEYAMA Mayumi HIROSE Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 794-799
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
GaAsdirect-conversionattenuatormodulatorMMICMESFETpersonal handy phone system
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A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS
Atsushi KAMEYAMA Katsue K.KAWAKYU Yoshiko IKEDA Masami NAGAOKA Kenji ISHIDA Tomohiro NITTA Misao YOSHIMURA Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 788-793
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
MMICSPDT switch ICGaAs MESFETresonatorsingle power supply operationpersonal handy phone system
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A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
Masami NAGAOKA Tomotoshi INOUE Katsue KAWAKYU Shuichi OBAYASHI Hiroyuki KAYANO Eiji TAKAGI Yoshikazu TANABE Misao YOSHIMURA Kenji ISHIDA Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Vol. E78-C  No. 4  pp. 424-429
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Analog Circuits
Keyword: 
monolithic power amplifiergallium arsenidePHSsingle low voltage supplyhigh linearity
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GaAs MESFET Circuit Structures Based on Virtual Ground Concept for High-Performance ASICs
Shoichi SHIMIZU Yukio KAMATANI Yoshiaki KITAURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/12/25
Vol. E76-C  No. 12  pp. 1835-1841
Type of Manuscript:  Special Section PAPER (Special Issue on ASICs for Automotive Electronics)
Category: 
Keyword: 
integrated electronicselectronics circuitsGaAs MESFETDCFL
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