Yoon-Ha JEONG


Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS
Seung-Hyun SONG Jae-Chul KIM Sung-Woo JUNG Yoon-Ha JEONG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 761-766
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GIDLjunctionhalonanoscale CMOS
 Summary | Full Text:PDF(646.9KB)

A Null Reshaping Scheme of Adaptive Notch Filter for RFI Reduction over CAP-Based VDSL Systems
Byeong-Sook BAE Gi-Hong IM Yoon-Ha JEONG 
Publication:   IEICE TRANSACTIONS on Communications
Publication Date: 2003/10/01
Vol. E86-B  No. 10  pp. 2987-2995
Type of Manuscript:  PAPER
Category: Transmission Systems and Transmission Equipment
Keyword: 
ANFRFIRPEVDSLadaptive notch filterspectral nullequalizer
 Summary | Full Text:PDF(680KB)

Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs
Kwang-Ho AHN Soong-Hak LEE Yoon-Ha JEONG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/08/01
Vol. E84-C  No. 8  pp. 1104-1110
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
non-linearityGaAs FETVolterra-series analysisgate-source capacitancedrain-source current
 Summary | Full Text:PDF(732.5KB)

An Approach to Extract Extrinsic Parameters of HEMTs
Man-Young JEON Yoon-Ha JEONG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12  pp. 1930-1936
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
parameter extractionHEMT characterizationequivalent-circuitcold HEMT
 Summary | Full Text:PDF(339.9KB)

A Technique for Extracting Small-Signal Equivalent-Circuit Elements of HEMTs
Man-Young JEON Byung-Gyu KIM Young-Jin JEON Yoon-Ha JEONG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1968-1976
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
parameter extractionHEMT characterizationequivalent-circuitcold HEMT
 Summary | Full Text:PDF(760.6KB)