Yong-Woo HWANG

Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si0.88Ge0.12 Heterostructure Channel
Sang-Sik CHOI A-Ram CHOI Jae-Yeon KIM Jeon-Wook YANG Yong-Woo HWANG Tae-Hyun HAN Deok Ho CHO Kyu-Hwan SHIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 716-720
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
SiGeMOSFETPD SOIstress effect
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