Yoichiro TAKAYAMA

Miniature Design Technique of Stabilized C-Band p-HEMT MMIC Doherty Power Amplifier with Lumped Element Load Modulator
Tsuyoshi YOSHIDA Yoichiro TAKAYAMA Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/10/01
Vol. E99-C  No. 10  pp. 1130-1139
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
doherty amplifier, microwave, power amplifier, GaAs HEMT, series connected load type, MMIC, broadband, 
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Experimental Design Method for High-Efficiency Microwave Power Amplifiers Based on a Low-Frequency Active Harmonic Load-Pull Technique
Ryo ISHIKAWA Yoichiro TAKAYAMA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/10/01
Vol. E99-C  No. 10  pp. 1147-1155
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
high efficiency, power amplifier, active load-pull, harmonic tuning, 
 Summary | Full Text:PDF
A High-Efficiency Low-Distortion Cascode Power Amplifier Consisting of Independently Biased InGaP/GaAs HBTs
Yuki TAKAGI Yoichiro TAKAYAMA Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/01/01
Vol. E97-C  No. 1  pp. 58-64
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
cascode, InGaP/GaAs HBT, microwave power amplifier, 
 Summary | Full Text:PDF
A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier
Akihiro ANDO Yoichiro TAKAYAMA Tsuyoshi YOSHIDA Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/07/01
Vol. E94-C  No. 7  pp. 1193-1198
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
class-F power amplifier, GaN HEMT, diode linearizer, intermodulation distortion, diode bias control, 
 Summary | Full Text:PDF
FOREWORD
Yoichiro TAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5  pp. 651-651
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
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Considerations for High-Efficiency Operation of Microwave Transistor Power Amplifiers
Yoichiro TAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 726-733
Type of Manuscript:  INVITED PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
microwave power transistor, microwave power amplifier, power efficiency, 
 Summary | Full Text:PDF
Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications
Yasuhiro OKAMOTO Kohji MATSUNAGA Mikio KANAMORI Masaaki KUZUHARA Yoichiro TAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 746-750
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction FET, high breakdown voltage, buried gate, 
 Summary | Full Text:PDF
Large-Signal Analysis of Power MOSFETs and Its Application to Device Design
Noriaki MATSUNO Hitoshi YANO Yasuyuki SUZUKI Toshiaki INOUE Tetsu TODA Yasushi KOSE Yoichiro TAKAYAMA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 734-739
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
power device, MOSFET, large-signal simulation, cellular telephone, 
 Summary | Full Text:PDF