Yi-Jen CHAN

A Novel Power MOSFET Structure with Shallow Junction Dual Well Design
Chien-Nan LIAO Feng-Tso CHIEN Chi-Ling WANG Hsien-Chin CHIU Yi-Jen CHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 937-942
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
power VDMOSFET, shallow dual well, gate charge, avalanche breakdown, 
 Summary | Full Text:PDF
CMOS RF Band-Pass Filter Design Using the High Quality Active Inductor
Kung-Hao LIANG Chien-Chih HO Chin-Wei KUO Yi-Jen CHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/12/01
Vol. E88-C  No. 12  pp. 2372-2376
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
CMOS, active inductor, qualify-factor, active band-pass filter, 
 Summary | Full Text:PDF
Simple Analytical Model of CMOS Transimpedance Amplifier to Enhance Operational Bandwidth
Chin-Wei KUO Chien-Chih HO Chao-Chih HSIAO Yi-Jen CHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6  pp. 1040-1046
Type of Manuscript:  PAPER
Category: Lasers, Quantum Electronics
Keyword: 
transimpedance amplifier, inductive peaking, CMOS, 
 Summary | Full Text:PDF
Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model
Hong-Hsin LAI Chao-Chih HSIAO Chin-Wei KUO Yi-Jen CHAN Takuro SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 76-80
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
CMOS, microwave large-signal model, linearity improvement, 
 Summary | Full Text:PDF
Device Linearity and Gate Voltage Swing Improvement by Al0.3Ga0.7As/In0.15Ga0.85As Double Doped-Channel Design
Feng-Tso CHIEN Hsien-Chin CHIU Shih-Cheng YANG Chii-Wen CHEN Yi-Jen CHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1306-1311
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
doped-channel EFTs, Al0.3Ga0.7As/In0.15Ga0.85As, device linearity, 
 Summary | Full Text:PDF
High Power In0.49Ga0.51P/In0.15Ga0.85As Heterostructure Doped-Channel FETs
Hsien-Chin CHIU Shih-Cheng YANG Yi-Jen CHAN Hao-Hsiung LIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1312-1317
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
DCFET, InGaP, power, performance, RIE, 
 Summary | Full Text:PDF