Yasuyuki OHKURA


Analysis of Injection Current with Electron Temperature for High-K Gate Stacks
Yasuyuki OHKURA Hiroyuki TAKASHINO Shoji WAKAHARA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 325-329
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
high-Kgate injection currentsimulationelectron temperature
 Summary | Full Text:PDF(649.2KB)

Hot Carrier Induced Degradation Due to Multi-Phonon Mechanism Analyzed by Lattice and Device Monte Carlo Coupled Simulation
Shirun HO Yasuyuki OHKURA Takuya MARUIZUMI Prasad JOSHI Naoki NAKAMURA Shoichi KUBO Sigeo IHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 336-349
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
 Summary | Full Text:PDF(1.3MB)

Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method
Yoshinori ODA Yasuyuki OHKURA Kaina SUZUKI Sanae ITO Hirotaka AMAKAWA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 416-420
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
threshold voltage fluctuationthree dimensional simulationstatistical dopant variationMonte Carlo method
 Summary | Full Text:PDF(804.9KB)