Yasuyuki MIYAMOTO


Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation
Vikrant UPADHYAYA Toru KANAZAWA Yasuyuki MIYAMOTO 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 453-457
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
HfS2field effect transistorsenvironmental degradationpassivationPMMAvacuum annealing
 Summary | Full Text:PDF(733.1KB)

Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance
Masayuki YAMADA Ken UCHIDA Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5  pp. 419-422
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
InGaAsMOSFETdynamic source resistancedelay component
 Summary | Full Text:PDF(355.4KB)

Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
Yutaro YAMAGUCHI Takeshi SAGAI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1323-1326
Type of Manuscript:  BRIEF PAPER
Category: III-V High-Speed Devices and Circuits
Keyword: 
heterojunction bipolar transistorInPbase-collector capacitancetransferred-substrateheterogeneous integration
 Summary | Full Text:PDF(619.5KB)

Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
Naoaki TAKEBE Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 917-920
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
heterojunction bipolar transistorInPbase-collector capacitancein situ etching
 Summary | Full Text:PDF(571.1KB)

Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode
Atsushi KATO Toru KANAZAWA Shunsuke IKEDA Yoshiharu YONAI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 904-909
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
back-sourceMOSFETInGaAsBCBbonding
 Summary | Full Text:PDF(1.8MB)

Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires
Naoaki TAKEBE Takashi KOBAYASHI Hiroyuki SUZUKI Yasuyuki MIYAMOTO Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 830-834
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
heterojunction bipolar transistorInPMOCVDCBr4
 Summary | Full Text:PDF(1MB)

Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
Yasuyuki MIYAMOTO Shinnosuke TAKAHASHI Takashi KOBAYASHI Hiroyuki SUZUKI Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 644-647
Type of Manuscript:  BRIEF PAPER
Category: Compound Semiconductor Devices
Keyword: 
InGaAs/InPHBTKirk effectcurrent spreading
 Summary | Full Text:PDF(5.1MB)

Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs
Kazuya NISHIHORI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/08/01
Vol. E90-C  No. 8  pp. 1643-1649
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
GaAs MESFETburied-p-typep-pocket-typeI-V kinkimpact ionizationhole accumulation
 Summary | Full Text:PDF(366.5KB)

Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer
Yasuyuki MIYAMOTO Ryo NAKAGAWA Issei KASHIMA Masashi ISHIDA Nobuya MACHIDA Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 972-978
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
hot electron transistorInPballistic electronelectron beam lithography
 Summary | Full Text:PDF(791.8KB)

InP DHBT with 0.5 µ m Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter
Toshiki ARAI Shigeharu YAMAGAMI Yoshifumi OKUDA Yoshimichi HARADA Yasuyuki MIYAMOTO Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1394-1398
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InPHBTnarrow emitter
 Summary | Full Text:PDF(519KB)

Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes Including Coherent and Incoherent Tunneling Processes
Riichiro TAKEMURA Michihiko SUHARA Yasuyuki MIYAMOTO Kazuhito FURUYA Yuji NAKAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11  pp. 1525-1529
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
triple-barrier resonant tunneling diodesphase coherent lengthcoherent tunneling
 Summary | Full Text:PDF(459.6KB)

Lasing Action in GaInAs/GaInAsP Quantum-Wire Structure
Ming CAO Yasunari MIYAKE Shigeo TAMURA Hideki HIRAYAMA Shigehisa ARAI Yasuharu SUEMATSU Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1990/01/25
Vol. E73-E  No. 1  pp. 63-70
Type of Manuscript:  Special Section PAPER (Special Issue on International Conference on Integrated Optics and Optical Fiber Communication)
Category: Optical Semiconductor Devices and OEICs
Keyword: 
 Summary | Full Text:PDF(800KB)

Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE
Yasuyuki MIYAMOTO Chiaki WATANABE Masashi NAGASHIMA Kazuhito FURUYA Yasuharu SUEMATSU 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1987/02/25
Vol. E70-E  No. 2  pp. 121-129
Type of Manuscript:  PAPER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(759.6KB)

GaInAs/InP MOSFETs by Organometallic Vapor Phase Epitaxy and Water Oxidation Techniques
Chiaki WATANABE Satoru KINOSHITA Kazuhito FURUYA Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/07/25
Vol. E69-E  No. 7  pp. 779-781
Type of Manuscript:  LETTER
Category: Semiconductors
Keyword: 
 Summary | Full Text:PDF(193.1KB)

1.55m GaInAsP/InP Buried Heterostructure Lasers with Multiple p-n Current Blocking Layer Entirely Grown by Low-Pressure OMVPE
Masashi NAGASHIMA Yasuyuki MIYAMOTO Chiaki WATANABE Yasuharu SUEMATSU Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/02/25
Vol. E69-E  No. 2  pp. 92-94
Type of Manuscript:  LETTER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(240.4KB)

OMVPE Grown GaInAsP/InP BH Laser on p-Type Substrate
Yasuyuki MIYAMOTO Chiaki WATANABE Masashi NAGASHIMA Kazuhito FURUYA Yasuharu SUEMATSU Yuichi TOHMORI Shigehisa ARAI 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1985/12/25
Vol. E68-E  No. 12  pp. 796-797
Type of Manuscript:  LETTER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(151KB)

Mass Transported 1.55µm GaInAsP/InP BH Laser Grown by OMVPE
Masashi NAGASHIMA Yasuyuki MIYAMOTO Kazuhito FURUYA Yasuharu SUEMATSU Chiaki WATANABE Shu-ren YANG 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1985/09/25
Vol. E68-E  No. 9  pp. 563-565
Type of Manuscript:  LETTER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(231.8KB)

Gain and Loss of GaInAsP/InP (λg1.5µm) Grown by OMVPE Estimated from Lasing Characteristics
Shu-ren YANG Yasuyuki MIYAMOTO Chiaki WATANABE Masashi NAGASHIMA Kazuhito FURUYA Yasuharu SUEMATSU 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1985/08/25
Vol. E68-E  No. 8  pp. 521-523
Type of Manuscript:  LETTER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(157.7KB)