IEICE SEARCH SYSTEM

Yasuyuki MIYAMOTO

Type-II HfS₂/MoS₂ Heterojunction Transistors Seiko NETSU Toru KANAZAWA Teerayut UWANNO Tomohiro AMEMIYA Kosuke NAGASHIO Yasuyuki MIYAMOTO
Publication: Publication Date: 2018/05/01 Vol. E101-C No. 5 pp. 338-342 Type of Manuscript: BRIEF PAPER Category: Keyword: TMDC, MoS₂, HfS₂, tunnel FET, heterojunction,
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Vacuum Annealing and Passivation of HfS₂ FET for Mitigation of Atmospheric Degradation Vikrant UPADHYAYA Toru KANAZAWA Yasuyuki MIYAMOTO
Publication: Publication Date: 2017/05/01 Vol. E100-C No. 5 pp. 453-457 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: HfS₂, field effect transistors, environmental degradation, passivation, PMMA, vacuum annealing,
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Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance Masayuki YAMADA Ken UCHIDA Yasuyuki MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2014/05/01 Vol. E97-C No. 5 pp. 419-422 Type of Manuscript: BRIEF PAPER Category: Keyword: InGaAs, MOSFET, dynamic source resistance, delay component,
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Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process Yutaro YAMAGUCHI Takeshi SAGAI Yasuyuki MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/08/01 Vol. E95-C No. 8 pp. 1323-1326 Type of Manuscript: BRIEF PAPER Category: III-V High-Speed Devices and Circuits Keyword: heterojunction bipolar transistor, InP, base-collector capacitance, transferred-substrate, heterogeneous integration,
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Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO₂ Wires Naoaki TAKEBE Yasuyuki MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 917-920 Type of Manuscript: BRIEF PAPER Category: Keyword: heterojunction bipolar transistor, InP, base-collector capacitance, in situ etching,
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Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode Atsushi KATO Toru KANAZAWA Shunsuke IKEDA Yoshiharu YONAI Yasuyuki MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 904-909 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: back-source, MOSFET, InGaAs, BCB, bonding,
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Fabrication of InP/InGaAs DHBTs with Buried SiO₂ Wires Naoaki TAKEBE Takashi KOBAYASHI Hiroyuki SUZUKI Yasuyuki MIYAMOTO Kazuhito FURUYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 830-834 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: heterojunction bipolar transistor, InP, MOCVD, CBr₄,
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Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector Yasuyuki MIYAMOTO Shinnosuke TAKAHASHI Takashi KOBAYASHI Hiroyuki SUZUKI Kazuhito FURUYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 644-647 Type of Manuscript: BRIEF PAPER Category: Compound Semiconductor Devices Keyword: InGaAs/InP, HBT, Kirk effect, current spreading,
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Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs Kazuya NISHIHORI Yasuyuki MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/08/01 Vol. E90-C No. 8 pp. 1643-1649 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: GaAs MESFET, buried-p-type, p-pocket-type, I-V kink, impact ionization, hole accumulation,
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Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer Yasuyuki MIYAMOTO Ryo NAKAGAWA Issei KASHIMA Masashi ISHIDA Nobuya MACHIDA Kazuhito FURUYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 972-978 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: THz Devices Keyword: hot electron transistor, InP, ballistic electron, electron beam lithography,
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InP DHBT with 0.5 µ m Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter Toshiki ARAI Shigeharu YAMAGAMI Yoshifumi OKUDA Yoshimichi HARADA Yasuyuki MIYAMOTO Kazuhito FURUYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1394-1398 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: III-V HBTs Keyword: InP, HBT, narrow emitter,
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Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes Including Coherent and Incoherent Tunneling Processes Riichiro TAKEMURA Michihiko SUHARA Yasuyuki MIYAMOTO Kazuhito FURUYA Yuji NAKAMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/11/25 Vol. E79-C No. 11 pp. 1525-1529 Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies) Category: Keyword: triple-barrier resonant tunneling diodes, phase coherent length, coherent tunneling,
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Lasing Action in GaInAs/GaInAsP Quantum-Wire Structure Ming CAO Yasunari MIYAKE Shigeo TAMURA Hideki HIRAYAMA Shigehisa ARAI Yasuharu SUEMATSU Yasuyuki MIYAMOTO
Publication: IEICE TRANSACTIONS (1976-1990) Publication Date: 1990/01/25 Vol. E73-E No. 1 pp. 63-70 Type of Manuscript: Special Section PAPER (Special Issue on International Conference on Integrated Optics and Optical Fiber Communication) Category: Optical Semiconductor Devices and OEICs Keyword:
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Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE Yasuyuki MIYAMOTO Chiaki WATANABE Masashi NAGASHIMA Kazuhito FURUYA Yasuharu SUEMATSU
Publication: IEICE TRANSACTIONS (1976-1990) Publication Date: 1987/02/25 Vol. E70-E No. 2 pp. 121-129 Type of Manuscript: PAPER Category: Optical and Quantum Electronics Keyword:
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GaInAs/InP MOSFETs by Organometallic Vapor Phase Epitaxy and Water Oxidation Techniques Chiaki WATANABE Satoru KINOSHITA Kazuhito FURUYA Yasuyuki MIYAMOTO
Publication: IEICE TRANSACTIONS (1976-1990) Publication Date: 1986/07/25 Vol. E69-E No. 7 pp. 779-781 Type of Manuscript: LETTER Category: Semiconductors Keyword:
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1.55m GaInAsP/InP Buried Heterostructure Lasers with Multiple p-n Current Blocking Layer Entirely Grown by Low-Pressure OMVPE Masashi NAGASHIMA Yasuyuki MIYAMOTO Chiaki WATANABE Yasuharu SUEMATSU Kazuhito FURUYA
Publication: IEICE TRANSACTIONS (1976-1990) Publication Date: 1986/02/25 Vol. E69-E No. 2 pp. 92-94 Type of Manuscript: LETTER Category: Optical and Quantum Electronics Keyword:
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OMVPE Grown GaInAsP/InP BH Laser on p-Type Substrate Yasuyuki MIYAMOTO Chiaki WATANABE Masashi NAGASHIMA Kazuhito FURUYA Yasuharu SUEMATSU Yuichi TOHMORI Shigehisa ARAI
Publication: IEICE TRANSACTIONS (1976-1990) Publication Date: 1985/12/25 Vol. E68-E No. 12 pp. 796-797 Type of Manuscript: LETTER Category: Optical and Quantum Electronics Keyword:
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Mass Transported 1.55µm GaInAsP/InP BH Laser Grown by OMVPE Masashi NAGASHIMA Yasuyuki MIYAMOTO Kazuhito FURUYA Yasuharu SUEMATSU Chiaki WATANABE Shu-ren YANG
Publication: IEICE TRANSACTIONS (1976-1990) Publication Date: 1985/09/25 Vol. E68-E No. 9 pp. 563-565 Type of Manuscript: LETTER Category: Optical and Quantum Electronics Keyword:
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Gain and Loss of GaInAsP/InP (λ_g1.5µm) Grown by OMVPE Estimated from Lasing Characteristics Shu-ren YANG Yasuyuki MIYAMOTO Chiaki WATANABE Masashi NAGASHIMA Kazuhito FURUYA Yasuharu SUEMATSU
Publication: IEICE TRANSACTIONS (1976-1990) Publication Date: 1985/08/25 Vol. E68-E No. 8 pp. 521-523 Type of Manuscript: LETTER Category: Optical and Quantum Electronics Keyword:
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