Yasutaka MAEDA


AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs
Shun-ichiro OHMI Mizuha HIROKI Yasutaka MAEDA 
Publication:   
Publication Date: 2019/02/01
Vol. E102-C  No. 2  pp. 138-142
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Organic Molecular Electronics and Biotechnology)
Category: 
Keyword: 
AuGebottom-contactpentaceneOFETlift-offyieldSPM cleaningPMA process
 Summary | Full Text:PDF

Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes
Yasutaka MAEDA Mizuha HIROKI Shun-ichiro OHMI 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5  pp. 323-327
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneN-doped LaB6OFETbottom-contact electrodessurface treatmentelectron injection
 Summary | Full Text:PDF

Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET
Yasutaka MAEDA Shun-ichiro OHMI Tetsuya GOTO Tadahiro OHMI 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 463-467
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneN-doped LaB6OFETsubthreshold swingaging characteristicgrain size
 Summary | Full Text:PDF

High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer
Yasutaka MAEDA Shun-ichiro OHMI Tetsuya GOTO Tadahiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 535-540
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
LaB6OFETbottom-contactpentacenedendritic grainlamellar grain
 Summary | Full Text:PDF