IEICE Trans

Yasuo OHNO

2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection Yusuke IKAWA Yorihide YUASA Cheng-Yu HU Jin-Ping AO Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/08/01 Vol. E93-C No. 8 pp. 1218-1224 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009) Category: GaN-based Devices Keyword: AlGaN/GaN HFET, collapse, virtual gate, pinning, surface states, simulation,
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Buffer Layer Doping Concentration Measurement Using V_T-V_SUB Characteristics of GaN HEMT with p-GaN Substrate Layer Cheng-Yu HU Katsutoshi NAKATANI Hiroji KAWAI Jin-Ping AO Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/08/01 Vol. E93-C No. 8 pp. 1234-1237 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009) Category: GaN-based Devices Keyword: AlGaN/GaN HFET, V_T-V_SUB, substrate bias, p-GaN, SIMS,
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A Study on Ohmic Contact to Dry-Etched p-GaN Cheng-Yu HU Jin-Ping AO Masaya OKADA Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 pp. 1020-1024 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: GaN Process Technology Keyword: Ohmic contact, p-GaN, dry-etching, etching damage, SiCl₄,
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Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress Jin-Ping AO Yuya YAMAOKA Masaya OKADA Cheng-Yu HU Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 pp. 1004-1008 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: AlGaN/GaN, heterojunction field-effect transistor, current collapse, gate bias stress,
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Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage Masaya OKADA Ryohei TAKAKI Daigo KIKUTA Jin-Ping AO Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 1042-1046 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: AlGaN/GaN HFETs, threshold voltage, temperature coefficient, illumination, buffer layer,
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A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET Daigo KIKUTA Jin-Ping AO Junya MATSUDA Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 1031-1036 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: HFET, GaN, AlGaN, MIS, insulator, enhancement,
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Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure Daigo KIKUTA Jin-Ping AO Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 683-689 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Compound Semiconductor Devices Keyword: device simulation, open-gated FET, AlGaN/GaN heterostructure, trap, surface state, interface state,
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Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT Yoshifumi KAWAKAMI Naohiro KUZE Jin-Ping AO Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 2039-2042 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: AlGaN/GaN HEMT, device simulation, cut-off frequency, drain breakdown voltage, impact ionization,
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High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors Jin-Ping AO Daigo KIKUTA Naotaka KUBOTA Yoshiki NAOI Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 2051-2057 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: Cu-gate, AlGaN/GaN, high electron mobility transistor, gate leakage current, high-temperature stability,
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FOREWORD Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 1907-1907 Type of Manuscript: FOREWORD Category: Keyword:
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Two-Dimensional Cyclic Bias Device Simulator and Its Application to GaAs HJFET Pulse Pattern Effect Analysis Yuji TAKAHASHI Kazuaki KUNIHIRO Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 pp. 917-923 Type of Manuscript: Special Section PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: device simulation, cyclic bias simulator, pulse pattern effect, deep level, GaAs HJFET,
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FOREWORD Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/25 Vol. E79-C No. 4 pp. 457-458 Type of Manuscript: FOREWORD Category: Keyword:
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A 1.3 V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10 Gbps Masahiro FUJII Tadashi MAEDA Yasuo OHNO Masatoshi TOKUSHIMA Masaoki ISHIKAWA Muneo FUKAISHI Hikaru HIDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/25 Vol. E79-C No. 4 pp. 512-517 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs) Category: Keyword: low power, high speed, GaAs, heterojunction FET, SCFL, logic swing, low supply voltage, D-FF,
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