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A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET Daigo KIKUTA Jin-Ping AO Junya MATSUDA Yasuo OHNO | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C
No. 7
pp. 1031-1036
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: HFET, GaN, AlGaN, MIS, insulator, enhancement, | | Summary | Full Text:PDF(725.2KB) | |
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FOREWORD Yasuo OHNO | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C
No. 10
pp. 1907-1907
Type of Manuscript:
FOREWORD Category: Keyword:
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FOREWORD Yasuo OHNO | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C
No. 4
pp. 457-458
Type of Manuscript:
FOREWORD Category: Keyword:
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