Yasuo OHNO


2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
Yusuke IKAWA Yorihide YUASA Cheng-Yu HU Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1218-1224
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFETcollapsevirtual gatepinningsurface statessimulation
 Summary | Full Text:PDF

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
Cheng-Yu HU Katsutoshi NAKATANI Hiroji KAWAI Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1234-1237
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFETVT-VSUBsubstrate biasp-GaNSIMS
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A Study on Ohmic Contact to Dry-Etched p-GaN
Cheng-Yu HU Jin-Ping AO Masaya OKADA Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1020-1024
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword: 
Ohmic contactp-GaNdry-etchingetching damageSiCl4
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Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
Jin-Ping AO Yuya YAMAOKA Masaya OKADA Cheng-Yu HU Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1004-1008
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
AlGaN/GaNheterojunction field-effect transistorcurrent collapsegate bias stress
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Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage
Masaya OKADA Ryohei TAKAKI Daigo KIKUTA Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1042-1046
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN HFETsthreshold voltagetemperature coefficientilluminationbuffer layer
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A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET
Daigo KIKUTA Jin-Ping AO Junya MATSUDA Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1031-1036
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
HFETGaNAlGaNMISinsulatorenhancement
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Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure
Daigo KIKUTA Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 683-689
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
device simulationopen-gated FETAlGaN/GaN heterostructuretrapsurface stateinterface state
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Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT
Yoshifumi KAWAKAMI Naohiro KUZE Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2039-2042
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaN HEMTdevice simulationcut-off frequencydrain breakdown voltageimpact ionization
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High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors
Jin-Ping AO Daigo KIKUTA Naotaka KUBOTA Yoshiki NAOI Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2051-2057
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
Cu-gateAlGaN/GaNhigh electron mobility transistorgate leakage currenthigh-temperature stability
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FOREWORD
Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1907-1907
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
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Two-Dimensional Cyclic Bias Device Simulator and Its Application to GaAs HJFET Pulse Pattern Effect Analysis
Yuji TAKAHASHI Kazuaki KUNIHIRO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 917-923
Type of Manuscript:  Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
device simulationcyclic bias simulatorpulse pattern effectdeep levelGaAs HJFET
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FOREWORD
Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 457-458
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF

A 1.3 V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10 Gbps
Masahiro FUJII Tadashi MAEDA Yasuo OHNO Masatoshi TOKUSHIMA Masaoki ISHIKAWA Muneo FUKAISHI Hikaru HIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 512-517
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
low powerhigh speedGaAsheterojunction FETSCFLlogic swinglow supply voltageD-FF
 Summary | Full Text:PDF