Yasuo NARA

Evaluation of Dielectric Reliability of Ultrathin HfSiOxNy in Metal-Gate Capacitors
Yanli PEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI Seiji INUMIYA Yasuo NARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 962-967
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Ultra-Thin Gate Insulators
Keyword: 
HfSiOxNy, metal gate, leakage current, charge trapping, TDDB, 
 Summary | Full Text:PDF
Fabrication and Delay Time Analysis of Deep Submicron CMOS Devices
Yasuo NARA Manabu DEURA Ken-ichi GOTO Tatsuya YAMAZAKI Tetsu FUKANO Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 293-298
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
deep submicron, CMOS, gate resistance, salicide, propagation delay time, SPICE, 
 Summary | Full Text:PDF
Ti Salicide Process for Subquarter-Micron CMOS Devices
Ken-ichi GOTO Tatsuya YAMAZAKI Yasuo NARA Tetsu FUKANO Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 480-485
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
Ti, TiSi2, salicide, subquarter-micron CMOS, gate resistance, 
 Summary | Full Text:PDF