Yasunori BITO


1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET
Fumio HARIMA Yasunori BITO Hidemasa TAKAHASHI Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1104-1108
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaAs- and InP-Based Devices
Keyword: 
enhancement modehetero-junction FETspower amplifiers
 Summary | Full Text:PDF

1.0 V Operation Power Heterojunction FET for Digital Cellular Phones
Takehiko KATO Yasunori BITO Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/02/01
Vol. E84-C  No. 2  pp. 249-252
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
power amplifierheterojunction FETlow voltage operationon-resistance
 Summary | Full Text:PDF

Single 1. 5 V Operation Power Amplifier MMIC with SrTiO3 Capacitors for 2. 4 GHz Wireless Applications
Takeshi B. NISHIMURA Naotaka IWATA Keiko YAMAGUCHI Masatoshi TOMITA Yasunori BITO Koichi TAKEMURA Yoichi MIYASAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 898-903
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
wireless LANMMICpower amplifierheterojunction FETSrTiO3low voltagesingle voltage supply
 Summary | Full Text:PDF