IEICE Trans

Yasunobu ISHII

Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs Tetsuya SUEMITSU Tetsuyoshi ISHII Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1283-1288 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: high-speed devices, millimeter wave FETs, HEMT, indium phosphide,
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49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs Yohtaro UMEDA Kazuo OSAFUNE Takatomo ENOKI Haruki YOKOYAMA Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/07/25 Vol. E82-C No. 7 pp. 1080-1085 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology) Category: Active Devices and Circuits Keyword: InP, HEMT, IC, interconnection, delay, static frequency divider,
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Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems Yohtaro UMEDA Takatomo ENOKI Taiichi OTSUJI Tetsuya SUEMITSU Haruki YOKOYAMA Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/25 Vol. E82-C No. 3 pp. 409-418 Type of Manuscript: INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Keyword: InP, HEMT, IC, optical communication, delay,
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Novel Channel Structures for High Frequency InP-Based HTEFs Takatomo ENOKI Kunihiro ARAI Tatsushi AKAZAKI Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/09/25 Vol. E76-C No. 9 pp. 1402-1411 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices) Category: Keyword: InGaAs, InAs, InAlAs, InP, current gain cutoff frequency, delay times, heterojunction FET, quantum well, real-space transfer,
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Silicon Nitride Passivated Ultra Low Noise InAlAs/InGaAs HEMT's with n⁺-InGaAs/n⁺-InAlAs Cap Layer Yohtaro UMEDA Takatomo ENOKI Kunihiro ARAI Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/06/25 Vol. E75-C No. 6 pp. 649-655 Type of Manuscript: Special Section PAPER (Special Issue on MMIC Technology) Category: Keyword: InGaAs, HEMT, low noise, equivalent circuit, InP,
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