IEICE Trans

Yasuhiro NAKASHA

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers Masaru SATO Yoshitaka NIIDA Toshihide SUZUKI Yasuhiro NAKASHA Yoichi KAWANO Taisuke IWAI Naoki HARA Kazukiyo JOSHIN
Publication: Publication Date: 2017/05/01 Vol. E100-C No. 5 pp. 417-423 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: common gate amplifier, GaN HEMT, InP HEMT, low noise amplifier,
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300-GHz Amplifier in 75-nm InP HEMT Technology Hiroshi MATSUMURA Yoichi KAWANO Shoichi SHIBA Masaru SATO Toshihide SUZUKI Yasuhiro NAKASHA Tsuyoshi TAKAHASHI Kozo MAKIYAMA Taisuke IWAI Naoki HARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/05/01 Vol. E99-C No. 5 pp. 528-534 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: InP HEMT, sub millimeter-wave, on-wafer TRL calibration,
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FOREWORD Yasuhiro NAKASHA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/12/01 Vol. E98-C No. 12 pp. 1058-1059 Type of Manuscript: FOREWORD Category: Keyword:
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Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis Shoichi SHIBA Masaru SATO Hiroshi MATSUMURA Yoichi KAWANO Tsuyoshi TAKAHASHI Toshihide SUZUKI Yasuhiro NAKASHA Taisuke IWAI Naoki HARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/12/01 Vol. E98-C No. 12 pp. 1112-1119 Type of Manuscript: Special Section PAPER (Special Section on Terahertz Waves Coming to the Real World) Category: Keyword: millimeter-wave, InP HEMTs, fundamental mixer, flip chip, waveguide module, spectrum analysis,
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Performance Analysis of a 10-Gb/s Millimeter-Wave Impulse Radio Transmitter Yasuhiro NAKASHA Naoki HARA Kiyomichi ARAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/10/01 Vol. E94-C No. 10 pp. 1557-1564 Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology) Category: Active Devices and Circuits Keyword: impulse radio, millimeter-wave, pulse generator, band-pass filter, jitter, intersymbol interference,
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Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems Toshihide SUZUKI Yasuhiro NAKASHA Hideki KANO Masaru SATO Satoshi MASUDA Ken SAWADA Kozo MAKIYAMA Tsuyoshi TAKAHASHI Tatsuya HIROSE Naoki HARA Masahiko TAKIGAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 1916-1922 Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: InP HEMT, MUX, DEMUX, D-FF, amplifier, ultra high speed, optical communication system,
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InGaP-Channel Field Effect Transistors with High Breakdown Voltage Naoki HARA Yasuhiro NAKASHA Toshihide KIKKAWA Kazukiyo JOSHIN Yuu WATANABE Hitoshi TANAKA Masahiko TAKIKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1294-1299 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: InGaP-channel FET, high breakdown voltage, high operating voltage, low distortion,
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Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones Kazukiyo JOSHIN Yasuhiro NAKASHA Taisuke IWAI Takumi MIYASHITA Shiro OHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/05/25 Vol. E82-C No. 5 pp. 725-729 Type of Manuscript: Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits) Category: Keyword: heterojunction bipolar transistor, intermodulation, harmonics, W-CDMA,
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Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits Yuu WATANABE Yasuhiro NAKASHA Kenji IMANISHI Masahiko TAKIKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/04/25 Vol. E78-C No. 4 pp. 368-373 Type of Manuscript: Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits) Category: Device Technology Keyword: RTD, HEMT, SRAM, negative differential resistance, digital circuits,
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A Cryogenic HEMT Pseudorandom Number Generator Yoshimi ASADA Yasuhiro NAKASHA Norio HIDAKA Takashi MIMURA Masayuki ABE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/10/25 Vol. E75-C No. 10 pp. 1133-1139 Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits) Category: Keyword: HEMT (high electron mobility transistor), pseudorandom number generator, maximum-length-sequence, DCFL (direct-coupled FET logic), ECL (emitter coupled logic) compatibility,
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