Yasuhiro NAKASHA


Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers
Masaru SATO Yoshitaka NIIDA Toshihide SUZUKI Yasuhiro NAKASHA Yoichi KAWANO Taisuke IWAI Naoki HARA Kazukiyo JOSHIN 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 417-423
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
common gate amplifierGaN HEMTInP HEMTlow noise amplifier
 Summary | Full Text:PDF

300-GHz Amplifier in 75-nm InP HEMT Technology
Hiroshi MATSUMURA Yoichi KAWANO Shoichi SHIBA Masaru SATO Toshihide SUZUKI Yasuhiro NAKASHA Tsuyoshi TAKAHASHI Kozo MAKIYAMA Taisuke IWAI Naoki HARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 528-534
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
InP HEMTsub millimeter-waveon-wafer TRL calibration
 Summary | Full Text:PDF

FOREWORD
Yasuhiro NAKASHA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/12/01
Vol. E98-C  No. 12  pp. 1058-1059
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF

Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis
Shoichi SHIBA Masaru SATO Hiroshi MATSUMURA Yoichi KAWANO Tsuyoshi TAKAHASHI Toshihide SUZUKI Yasuhiro NAKASHA Taisuke IWAI Naoki HARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/12/01
Vol. E98-C  No. 12  pp. 1112-1119
Type of Manuscript:  Special Section PAPER (Special Section on Terahertz Waves Coming to the Real World)
Category: 
Keyword: 
millimeter-waveInP HEMTsfundamental mixerflip chipwaveguide modulespectrum analysis
 Summary | Full Text:PDF

Performance Analysis of a 10-Gb/s Millimeter-Wave Impulse Radio Transmitter
Yasuhiro NAKASHA Naoki HARA Kiyomichi ARAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/10/01
Vol. E94-C  No. 10  pp. 1557-1564
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices and Circuits
Keyword: 
impulse radiomillimeter-wavepulse generatorband-pass filterjitterintersymbol interference
 Summary | Full Text:PDF

Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems
Toshihide SUZUKI Yasuhiro NAKASHA Hideki KANO Masaru SATO Satoshi MASUDA Ken SAWADA Kozo MAKIYAMA Tsuyoshi TAKAHASHI Tatsuya HIROSE Naoki HARA Masahiko TAKIGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1916-1922
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
InP HEMTMUXDEMUXD-FFamplifierultra high speedoptical communication system
 Summary | Full Text:PDF

InGaP-Channel Field Effect Transistors with High Breakdown Voltage
Naoki HARA Yasuhiro NAKASHA Toshihide KIKKAWA Kazukiyo JOSHIN Yuu WATANABE Hitoshi TANAKA Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1294-1299
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InGaP-channel FEThigh breakdown voltagehigh operating voltagelow distortion
 Summary | Full Text:PDF

Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones
Kazukiyo JOSHIN Yasuhiro NAKASHA Taisuke IWAI Takumi MIYASHITA Shiro OHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/25
Vol. E82-C  No. 5  pp. 725-729
Type of Manuscript:  Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
heterojunction bipolar transistorintermodulationharmonicsW-CDMA
 Summary | Full Text:PDF

Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits
Yuu WATANABE Yasuhiro NAKASHA Kenji IMANISHI Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Vol. E78-C  No. 4  pp. 368-373
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
Keyword: 
RTDHEMTSRAMnegative differential resistancedigital circuits
 Summary | Full Text:PDF

A Cryogenic HEMT Pseudorandom Number Generator
Yoshimi ASADA Yasuhiro NAKASHA Norio HIDAKA Takashi MIMURA Masayuki ABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10  pp. 1133-1139
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HEMT (high electron mobility transistor)pseudorandom number generatormaximum-length-sequenceDCFL (direct-coupled FET logic)ECL (emitter coupled logic) compatibility
 Summary | Full Text:PDF