Yangyuan WANG


Atomistic Simulation of RTA Annealing for Shallow Junction Formation Characterizing both BED and TED
Min YU Ru HUANG Xing ZHANG Yangyuan WANG Hideki OKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 295-300
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
atomistic modelsimulationBEDTED
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