Umesh K. MISHRA


Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy
Andrea CORRION Christiane POBLENZ Patrick WALTEREIT Tomas PALACIOS Siddharth RAJAN Umesh K. MISHRA Jim S. SPECK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 906-912
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
MBEGallium NitrideHEMTmicrowaveMBE
 Summary | Full Text:PDF

GaN-Based FETs for Microwave Power Amplification
Yi-Feng WU Bernd P. KELLER Stacia KELLER Jane J. XU Brian J. THIBEAULT Steven P. DENBAARS Umesh K. MISHRA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1895-1905
Type of Manuscript:  INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
GaNFETHEMTpower deviceamplifiermicrowave
 Summary | Full Text:PDF