Tsuyoshi YOSHIDA


Miniature Design Technique of Stabilized C-Band p-HEMT MMIC Doherty Power Amplifier with Lumped Element Load Modulator
Tsuyoshi YOSHIDA Yoichiro TAKAYAMA Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/10/01
Vol. E99-C  No. 10  pp. 1130-1139
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
doherty amplifiermicrowavepower amplifierGaAs HEMTseries connected load typeMMICbroadband
 Summary | Full Text:PDF

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier
Akihiro ANDO Yoichiro TAKAYAMA Tsuyoshi YOSHIDA Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/07/01
Vol. E94-C  No. 7  pp. 1193-1198
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
class-F power amplifierGaN HEMTdiode linearizerintermodulation distortiondiode bias control
 Summary | Full Text:PDF