Tsuyoshi TANAKA


K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W
Noboru NEGORO Masayuki KURODA Tomohiro MURATA Masaaki NISHIJIMA Yoshiharu ANDA Hiroyuki SAKAI Tetsuzo UEDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1327-1331
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN MIS-HFETK-bandpower amplifierSi substratehigh-temperature chemical vapor deposition SiN
 Summary | Full Text:PDF

Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide
Shun SUGIURA Shigeru KISHIMOTO Takashi MIZUTANI Masayuki KURODA Tetsuzo UEDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1001-1003
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
enhancementGaNMOSFETsHfO2
 Summary | Full Text:PDF

A 1.5 V, 200 MHz, 400 MIPS, 188 µA/MHz and 1.2 V, 300 MHz, 600 MIPS, 169 µA/MHz Digital Signal Processor Core for 3G Wireless Applications
Hiroshi TAKAHASHI Shigeshi ABIKO Kenichi TASHIRO Kaoru AWAKA Yutaka TOYONOH Rimon IKENO Shigetoshi MURAMATSU Yasumasa IKEZAKI Tsuyoshi TANAKA Akihiro TAKEGAMA Hiroshi KIMIZUKA Hidehiko NITTA Miki KOJIMA Masaharu SUZUKI James Lowell LARIMER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/04/01
Vol. E87-C  No. 4  pp. 491-501
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)
Category: 
Keyword: 
200 MHz300 MHz400 MIPS600 MIPShigh-speedlow-powerfixed point DSP130 nm
 Summary | Full Text:PDF

Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure
Naohiro TSURUMI Motonori ISHII Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2004-2009
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
HBTInGaPGaAsledgecapacitorbase resistancerecombination
 Summary | Full Text:PDF

Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector
Toshinobu MATSUNO Atsuhiko KANDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2022-2026
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
SiGe HBTpower amplifierselectively ion implanted collectorcollector break down voltage
 Summary | Full Text:PDF

Low Noise and Low Distortion Performances of an AlGaN/GaN HFET
Yutaka HIROSE Yoshito IKEDA Motonori ISHII Tomohiro MURATA Kaoru INOUE Tsuyoshi TANAKA Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2058-2064
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaN HFETlow noise amplifiernoise figure (NF)intermodulation distortion
 Summary | Full Text:PDF

0.15-µm T-Shaped Gate MODFETs Using BCB as Low-k Spacer
Yoshiharu ANDA Katsuhiko KAWASHIMA Mitsuru NISHITSUJI Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1323-1327
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
GaAsMODFETBCBmillimeter wavelow-k
 Summary | Full Text:PDF

Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes
Keiichi MURAYAMA Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1379-1382
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InGaP/GaAs HBTbias circuittemperature compensation
 Summary | Full Text:PDF

A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads
Hidetoshi ISHIDA Kazuo MIYATSUJI Tsuyoshi TANAKA Daisuke UEDA Chihiro HAMAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 2044-2049
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Assembly Technology
Keyword: 
packagesubsidiary groundhigh isolationelectromagnetic simulation
 Summary | Full Text:PDF

A Low-Voltage GaAs One-Chip Oscillator IC for Laser-Diode Noise Suppression
Tsuyoshi TANAKA Hideo NAGAI Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1246-1251
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
GaAsone-chiposcillatorBSTlaser diode
 Summary | Full Text:PDF

A GaAs Monolithic High-Frequency Modulator IC for Laser-Diode Noise Suppression
Tatsuo OTSUKI Tsuyoshi TANAKA Noriyuki YOSHIKAWA Akio SHIMANO Hiromitsu TAKAGI Gota KANO 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E  No. 4  pp. 296-298
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Compound Semiconductor Devices
Keyword: 
 Summary | Full Text:PDF