Tsuyoshi FUJIWARA


A Bipolar-Based 0.5 µm BiCMOS Technology on Bonded SOI for High-Speed LSIs
Makoto YOSHIDA Toshiro HIRAMOTO Tsuyoshi FUJIWARA Takashi HASHIMOTO Tetsuya MURAYA Shigeharu MURATA Kunihiko WATANABE Nobuo TAMBA Takahide IKEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8  pp. 1395-1403
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: General Technology
Keyword: 
BiCMOSbonded SOIdouble polysilicon bipolartrench isolationstress
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