IEICE Trans

Tsuyoshi ARIGANE

A 126 mm² 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology Hideaki KURATA Satoshi NODA Yoshitaka SASAGO Kazuo OTSUGA Tsuyoshi ARIGANE Tetsufumi KAWAMURA Takashi KOBAYASHI Hitoshi KUME Kazuki HOMMA Teruhiko ITO Yoshinori SAKAMOTO Masahiro SHIMIZU Yoshinori IKEDA Osamu TSUCHIYA Kazunori FURUSAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/11/01 Vol. E90-C No. 11 pp. 2146-2156 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: flash memory, multilevel, inversion-layer-bit-line, AG-AND,
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Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories Kazuo OTSUGA Hideaki KURATA Satoshi NODA Yoshitaka SASAGO Tsuyoshi ARIGANE Tetsufumi KAWAMURA Takashi KOBAYASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 pp. 772-778 Type of Manuscript: Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies) Category: Memory Keyword: flash memory, AG-AND, multilevel technology, constant-charge-injection programming,
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A 130-nm CMOS 95-mm² 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput Hideaki KURATA Shunichi SAEKI Takashi KOBAYASHI Yoshitaka SASAGO Tsuyoshi ARIGANE Keiichi YOSHIDA Yoshinori TAKASE Takayuki YOSHITAKE Osamu TSUCHIYA Yoshinori IKEDA Shunichi NARUMI Michitaro KANAMITSU Kazuto IZAWA Kazunori FURUSAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/10/01 Vol. E89-C No. 10 pp. 1469-1479 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: flash memory, AG-AND, multilevel, high speed programming, CCIP,
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