Tsutomu TASHIRO


7-Mask Self-Aligned SiGe Base Bipolar Transistors with fT of 80 GHz
Tsutomu TASHIRO Takasuke HASHIMOTO Fumihiko SATO Yoshihiro HAYASHI Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/05/25
Vol. E80-C  No. 5  pp. 707-713
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
bipolar transistorsilicon-germanium baseselective epitaxial growthCMPtrench isolationfT
 Summary | Full Text:PDF(624.6KB)

An Advanced BSG Self-Aligned (A-BSA) Transistor Technology for High Speed IC Implementation
Tsutomu TASHIRO Mitsuhiro SUGIYAMA Hisashi TAKEMURA Chihiro OGAWA Masakazu KURISU Hideki KITAHATA Takenori MORIKAWA Masahiko NAKAMAE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/12/25
Vol. E79-C  No. 12  pp. 1733-1740
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
bipolar transistorself-alignedcutoff frequencymaximum frequency of oscillationCVD BSGdevice design
 Summary | Full Text:PDF(773.9KB)

A Si Bipolar 1.4-GHz Time Space Switch LSI for B-ISDN
Osamu MATSUDA Shin-ichiro HAYANO Takao TAKEUCHI Hideki KITAHATA Hisashi TAKEMURA Tsutomu TASHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/05/25
Vol. E76-C  No. 5  pp. 858-862
Type of Manuscript:  Special Section LETTER (Special Section on the 1992 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.28, No.4 April 1993))
Category: 
Keyword: 
 Summary | Full Text:PDF(386.1KB)