Tsuneo URISU


Quantitative Analysis of Submonolayer Si on Ge Surface by Isotope Dilution Secondary Ion Mass Spectrscopy
Izumi KAWASHIMA Yasuo TAKAHASHI Tsuneo URISU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9  pp. 986-989
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
ID-SIMSisotope dilution SIMSself-limiting adsorptionatomic layer epitaxySi film
 Summary | Full Text:PDF(323.2KB)

Synchrotron Radiation Stimulated Evaporation of a-SiO2 Films and Its Application for Si Surface Cleaning
Housei AKAZAWA Yuichi UTSUMI Jun-ichi TAKAHASHI Tsuneo URISU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/07/25
Vol. E75-C  No. 7  pp. 781-789
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
photostimulated evaporationa-SiO2surface cleaninggas-source MBE
 Summary | Full Text:PDF(1MB)