Tsunenobu KIMOTO


Hetero-Interface Properties of SiO2/4H-SiC on Various Crystal Orientations
Hiroyuki MATSUNAMI Tsunenobu KIMOTO Hiroshi YANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1943-1948
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
silicon carbideSiO2/4H-SiC interfaceC-V characteristicsconductance methodchannel mobility
 Summary | Full Text:PDF(528.2KB)