Toyoji YAMAMOTO


Suppression of Charges in Al2O3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
Kenzo MANABE Kazuhiko ENDO Satoshi KAMIYAMA Toshiyuki IWAMOTO Takashi OGURA Nobuyuki IKARASHI Toyoji YAMAMOTO Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 30-36
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ gate dielectricaluminum oxideplasma nitridationfixed chargeMOSFET performance
 Summary | Full Text:PDF(953.8KB)

0.15 µm CMOS Devices with Reduced Junction Capacitance
Akira TANABE Kiyoshi TAKEUCHI Toyoji YAMAMOTO Takeo MATSUKI Takemitsu KUNIO Masao FUKUMA Ken NAKAJIMA Naoki AIZAKI Hidenobu MIYAMOTO Eiji IKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 267-273
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
CMOSEB lithographyTi salicideSPICE
 Summary | Full Text:PDF(690.1KB)