Toshiyuki TAKEWAKI


Accurate Modeling Method for Cu Interconnect
Kenta YAMADA Hiroshi KITAHARA Yoshihiko ASAI Hideo SAKAMOTO Norio OKADA Makoto YASUDA Noriaki ODA Michio SAKURAI Masayuki HIROI Toshiyuki TAKEWAKI Sadayuki OHNISHI Manabu IGUCHI Hiroyasu MINDA Mieko SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/06/01
Vol. E91-C  No. 6  pp. 968-977
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
Cuinterconnectcross-sectionmodeling
 Summary | Full Text:PDF

Chip-Level Performance Improvement Using Triple Damascene Wiring Design Concept for the 0.13 µm CMOS Generation and Beyond
Noriaki ODA Hiroyuki KUNISHIMA Takashi KYOUNO Kazuhiro TAKEDA Tomoaki TANAKA Toshiyuki TAKEWAKI Masahiro IKEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/11/01
Vol. E89-C  No. 11  pp. 1544-1550
Type of Manuscript:  Special Section PAPER (Special Section on Novel Device Architectures and System Integration Technologies)
Category: 
Keyword: 
copperCMOSdamascenedesign
 Summary | Full Text:PDF

Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects
Takahisa NITTA Tadahiro OHMI Tsukasa HOSHI Toshiyuki TAKEWAKI Tadashi SHIBATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 626-634
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
copper interconnectsgiant-grainelectromigrationlow-kinetic-energy ion bombardment process
 Summary | Full Text:PDF