Toshiyuki OASHI

Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM
Fukashi MORISHITA Yasuo YAMAGUCHI Takahisa EIMORI Toshiyuki OASHI Kazutami ARIMOTO Yasuo INOUE Tadashi NISHIMURA Michihiro YAMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 544-552
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
SOI-DRAM, floating body, high speed, low power, data retention characteristics, 
 Summary | Full Text:PDF
Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's
Yasuo YAMAGUCHI Toshiyuki OASHI Takahisa EIMORI Toshiaki IWAMATSU Shouichi MITAMOTO Katsuhiro SUMA Takahiro TSURUDA Fukashi MORISHITA Masakazu HIROSE Hideto HIDAKA Kazutami ARIMOTO Kazuyasu FUJISHIMA Yasuo INOUE Tadashi NISHIMURA Hirokazu MIYOSHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/25
Vol. E79-C  No. 6  pp. 772-780
Type of Manuscript:  INVITED PAPER (Special Issue on ULSI Memory Technology)
Category: Dynamic RAMs
Keyword: 
SOL, SIMOX, DRAM, low-voltage operation, 
 Summary | Full Text:PDF